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1.发明申请公开(公告)号：US20180308694A1
公开(公告)日：2018-10-25
申请号：US15951726
申请日：2018-04-12
Applicant: Applied Materials, Inc.
Inventor： Yihong Chen , Ziping Duan , Yong Wu , Abhijit Basu Mallick , Srinivas Gandikota
IPC: H01L21/033
CPC classification number: H01L21/0338 , H01L21/0332
Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.
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