公开(公告)号：US20030008070A1

公开(公告)日：2003-01-09

申请号：US09880465

申请日：2001-06-12

Applicant: Applied Materials,Inc

Inventor： Sean Michael Seutter ,  Seshadri Ganguli ,  Mei Chang ,  Michael X. Yang ,  Ming Xi

IPC: C23C016/00

CPC classification number: C23C16/16 ,  H01L21/28556 ,  H01L21/28568

Abstract: Provided herein is a method of depositing a low resistivity tungsten film onto a wafer comprising the steps of introducing a metalorganic tungsten-containing compound into a deposition chamber of a CVD apparatus; maintaining the deposition chamber at a pressure and the wafer at a temperature suitable for the high pressure chemical vapor deposition of the tungsten film onto the wafer; thermally decomposing the tungsten-containing compound in the deposition chamber; and vapor-depositing the tungsten film onto the wafer thereby forming a low-resistivity tungsten film. Specifically provided is a method of depositing a low-resistivity tungsten film by high pressure MOCVD using tungsten hexacarbonyl as the precursor. Also provided is a low-resistivity tungsten film.

Abstract translation: 本文提供了一种在晶片上沉积低电阻率钨膜的方法，包括将金属有机含钨化合物引入CVD设备的沉积室中的步骤; 将沉积室保持在压力和晶片处于适合于将钨膜高压化学气相沉积到晶片上的温度; 在沉积室中热分解含钨化合物; 并将钨膜气相沉积到晶片上，从而形成低电阻率钨膜。 具体提供的是使用六羰基钨作为前体的通过高压MOCVD沉积低电阻率钨膜的方法。 还提供了低电阻率钨膜。