公开(公告)号：US20040021076A1

公开(公告)日：2004-02-05

申请号：US10434977

申请日：2003-05-09

Applicant: Applied Materials Israel Ltd

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: H01J037/28

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US20040084622A1

公开(公告)日：2004-05-06

申请号：US10695620

申请日：2003-10-27

Applicant: Applied Materials Israel Ltd

Inventor： Alexander Kadyshevitch ,  Dror Shemesh ,  Yaniv Brami ,  Dmitry Shur

IPC: H01J037/252 ,  G01N023/225

CPC classification number: H01L22/34 ,  H01J37/32935 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract translation: 一种用于过程监测的方法包括在第二层中产生接触开口之后，接收具有至少部分导电的第一层的样品和在第一层上形成的第二层。 带电粒子束沿着光束轴线被引导，所述光束轴线基本上偏离于与样品表面的法线的角度，以便照射分布在至少一个区域上的多个位置中的每一个中的一个或多个接触开口 的样品。 响应于多个位置中的每一个处的一个或多个接触开口的照射来测量流过第一层的样本电流。 产生至少样品区域的图，指示响应于多个位置处的照射测量的样本电流。