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公开(公告)号：US20220254000A1
公开(公告)日：2022-08-11
申请号：US17730117
申请日：2022-04-26
发明人： Ariel SHKALIM , Vladimir OVECHKIN , Evgeny BAL , Ronen MADMON , Ori PETEL , Alexander CHERESHNYA , Oren Shmuel COHEN , Boaz COHEN
摘要： There is provided a mask inspection system and a method of mask inspection. The method comprises: detecting, by the inspection tool, a runtime defect at a defect location on a mask of a semiconductor specimen during runtime scan of the mask, and acquiring, by the inspection tool after runtime and based on the defect location, a plurality sets of aerial images of the runtime defect corresponding to a plurality of focus states throughout a focus process window, each set of aerial images acquired at a respective focus state. The method further comprises for each set of aerial images, calculating a statistic-based EPD value of the runtime defect, thereby giving rise to a plurality of statistic-based EPD values each corresponding to a respective focus state, and determining whether the runtime defect is a true defect based on the plurality of statistic-based EPD values.
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公开(公告)号：US20210073963A1
公开(公告)日：2021-03-11
申请号：US16833380
申请日：2020-03-27
发明人： Ariel SHKALIM , Vladimir OVECHKIN , Evgeny BAL , Ronen MADMON , Ori PETEL , Alexander CHERESHNYA , Oren Shmuel COHEN , Boaz COHEN
摘要： There is provided a mask inspection system and a method of mask inspection. The method comprises: during a runtime scan of a mask of a semiconductor specimen, processing a plurality of aerial images of the mask acquired by the mask inspection system to calculate a statistic-based Edge Positioning Displacement (EPD) of a potential defect, wherein the statistic-based EPD is calculated using a Print Threshold (PT) characterizing the mask and is applied to each of the one or more acquired aerial images to calculate respective EPD of the potential defect therein; and filtering the potential defect as a “runtime true” defect when the calculated statistic-based EPD exceeds a predefined EPD threshold, and filtering out the potential defect as a “false” defect when the calculated statistic-based EPD is lower than the predefined EPD threshold. The method can further comprise after-runtime EPD-based filtering of the plurality of “runtime true” defects.
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公开(公告)号：US20230080151A1
公开(公告)日：2023-03-16
申请号：US17473342
申请日：2021-09-13
发明人： Ariel SHKALIM , Evgeny BAL
IPC分类号： G06T7/00 , G06T7/11 , G01N21/956 , G03F7/20
摘要： There is provided a system and method of a method of mask inspection, comprising: obtaining a first image representative of at least part of the mask; applying a printing threshold on the first image to obtain a second image; estimating a contour for each structural element of interest (SEI) of a group of SEIs, and extracting a set of attributes characterizing the contour, giving rise to a group of contours corresponding to the group of SEIs and respective sets of attributes associated therewith; for each given contour, identifying, among the remaining contours in the group of contours, one or more reference contours similar to the given contour, by comparing between the respective sets of attributes associated therewith; and measuring a deviation between the given contour and each reference contour thereof, giving rise to one or more measured deviations indicative of whether a defect is present.
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公开(公告)号：US20200327652A1
公开(公告)日：2020-10-15
申请号：US16652970
申请日：2018-10-01
发明人： Vadim VERESCHAGIN , Roman KRIS , Ishai SCHWARZBAND , Boaz COHEN , Ariel SHKALIM , Evgeny BAL
摘要： A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.
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