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公开(公告)号：US20190219390A1
公开(公告)日：2019-07-18
申请号：US15870622
申请日：2018-01-12
发明人： Shimon LEVI , Ishai SCHWARZBAND , Roman KRIS
摘要： A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.
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公开(公告)号：US20160035076A1
公开(公告)日：2016-02-04
申请号：US14446295
申请日：2014-07-29
发明人： Ishai SCHWARZBAND , Yan IVANCHENKO , Daniel RAVID , Orly ZVITIA , Idan KAIZERMAN
CPC分类号： G06T7/001 , G06K9/4604 , G06K9/6211 , G06K2209/19 , G06K2209/403 , G06T2207/10028 , G06T2207/10061 , G06T2207/30148
摘要： A method for image processing includes providing a microscopic image of a structure fabricated on a substrate and computer-aided design (CAD) data used in fabricating the structure. The microscopic image is processed by a computer so as to generate a first directionality map, which includes, for a matrix of points in the microscopic image, respective directionality vectors corresponding to magnitudes and directions of edges at the points irrespective of a sign of the magnitudes. The CAD data are processed by the computer so as to produce a simulated image based on the CAD data and to generate a second directionality map based on the simulated image. The first and second directionality maps are compared by the computer so as to register the microscopic image with the CAD data.
摘要翻译： 一种用于图像处理的方法包括提供在基板上制造的结构的微观图像和用于制造该结构的计算机辅助设计（CAD）数据。 显微镜图像由计算机处理，以便产生第一方向性图，其包括对于微观图像中的点的矩阵，对应于点处的边缘的大小和方向的各个方向性矢量，而不管幅度的符号 。 CAD数据由计算机处理，以便根据CAD数据产生模拟图像，并且基于模拟图像产生第二方向性图。 通过计算机比较第一和第二方向性图，以便将CAD数据注册到微观图像。
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公开(公告)号：US20180268539A1
公开(公告)日：2018-09-20
申请号：US15918570
申请日：2018-03-12
发明人： Yakov WEINBERG , Ishai SCHWARZBAND , Roman KRIS , Itay ZAUER , Ran GOLDMAN , Olga NOVAK , Dhananjay Singh RATHORE , Ofer ADAN , Shimon LEVI
CPC分类号： G06T7/0006 , G06K9/525 , G06T7/001 , G06T7/10 , G06T7/11 , G06T7/12 , G06T7/143 , G06T7/194 , G06T7/30 , G06T7/337 , G06T2207/10061 , G06T2207/20116 , G06T2207/30148
摘要： A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.
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公开(公告)号：US20170243343A1
公开(公告)日：2017-08-24
申请号：US15390663
申请日：2016-12-26
发明人： Yakov WEINBERG , Ishai SCHWARZBAND , Roman KRIS , Itay ZAUER , Ran GOLDMAN , Olga NOVAK , Dhananjay Singh RATHORE , Ofer ADAN , Shimon LEVI
CPC分类号： G06T7/0006 , G06K9/525 , G06T7/001 , G06T7/10 , G06T7/11 , G06T7/12 , G06T7/143 , G06T7/194 , G06T7/30 , G06T7/337 , G06T2207/10061 , G06T2207/20116 , G06T2207/30148
摘要： A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.
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5.发明申请公开(公告)号：US20170018066A1
公开(公告)日：2017-01-19
申请号：US14798283
申请日：2015-07-13
发明人： Yakov WEINBERG , Ishai SCHWARZBAND , Roman KRIS , Itay ZAUER , Ran GOLDMAN , Olga NOVAK , Dhananjay Singh RATHORE , Ofer ADAN , Shimon LEVI
IPC分类号： G06T7/00
CPC分类号： G06T7/0006 , G06K9/525 , G06T7/001 , G06T7/10 , G06T7/11 , G06T7/12 , G06T7/143 , G06T7/194 , G06T7/30 , G06T7/337 , G06T2207/10061 , G06T2207/20116 , G06T2207/30148
摘要： A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.
摘要翻译： 用于确定多层结构的层之间的重叠的方法可以包括获得表示多层结构的给定图像，获得多层结构层的预期图像，提供多层结构的组合预期图像作为所述多层结构的预期图像的组合 执行给定图像对组合预期图像的注册，以及提供给定图像的分割，从而产生分割图像，以及所述多层结构层的映射。 该方法还可以包括通过将所选择的两个层的图与所述两个所选择的层的预期图像一起处理来确定多层结构的任何两个所选择的层之间的覆盖。
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公开(公告)号：US20210383529A1
公开(公告)日：2021-12-09
申请号：US17281948
申请日：2019-10-31
发明人： Roman KRIS , Roi MEIR , Sahar LEVIN , Ishai SCHWARZBAND , Grigory KLEBANOV , Shimon LEVI , Efrat NOIFELD , Hiroshi MIROKU , Taku YOSHIZAWA , Kasturi SAHA , Sharon DUVDEVANI-BAR , Vadim VERESCHAGIN
摘要： A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.
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公开(公告)号：US20200327652A1
公开(公告)日：2020-10-15
申请号：US16652970
申请日：2018-10-01
发明人： Vadim VERESCHAGIN , Roman KRIS , Ishai SCHWARZBAND , Boaz COHEN , Ariel SHKALIM , Evgeny BAL
摘要： A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.
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公开(公告)号：US20180336675A1
公开(公告)日：2018-11-22
申请号：US15982918
申请日：2018-05-17
发明人： Ishai SCHWARZBAND , Yan AVNIEL , Sergey KHRISTO , Mor BARAM , Shimon LEVI , Doron GIRMONSKY , Roman KRIS
IPC分类号： G06T7/00
摘要： An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
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公开(公告)号：US20180336671A1
公开(公告)日：2018-11-22
申请号：US15982876
申请日：2018-05-17
发明人： Ishai SCHWARZBAND , Sergey KHRISTO , Yan AVNIEL
摘要： A height of a pattern on a semiconductor wafer is determined by comparing a measured image of the pattern with a predicted image of the pattern, as produced by a shadow model. An estimated height of the pattern is provided as an input to the shadow model. The shadow model produces occluding contours that are used to generate predicted images. A set of predicted images are generated, each predicted image being associated with an estimated height. The estimated height corresponding to the predicted image most closely matching with the measured image is used as the height calculated by the shadow model.
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公开(公告)号：US20170194125A1
公开(公告)日：2017-07-06
申请号：US14985847
申请日：2015-12-31
发明人： Roman KRIS , Yakov WEINBERG , Yan IVANCHENKO , Ishai SCHWARZBAND , Dan LANGE , Arbel ENGLANDER , Efrat NOIFELD , Ran GOLDMAN , Ori SHOVAL
IPC分类号： H01J37/22 , G01N23/225 , G01B15/04 , H01J37/28
CPC分类号： H01J37/222 , G01N23/2251 , G01N2223/401 , G01N2223/418 , G01N2223/6116 , G01N2223/646 , H01J37/28 , H01J2237/24592 , H01J2237/2813 , H01L22/12
摘要： A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.
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