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公开(公告)号：US20190219390A1
公开(公告)日：2019-07-18
申请号：US15870622
申请日：2018-01-12
发明人： Shimon LEVI , Ishai SCHWARZBAND , Roman KRIS
摘要： A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.
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公开(公告)号：US20230420308A1
公开(公告)日：2023-12-28
申请号：US17848360
申请日：2022-06-23
发明人： Rafael BISTRITZER , Vadim VERESCHAGIN , Grigory KLEBANOV , Roman KRIS , Ilan BEN-HARUSH , Omer KEREM , Asaf GOLOV , Elad SOMMER
CPC分类号： H01L22/12 , G06T7/0004 , G06T7/11 , G06V10/764 , G06T7/50 , G06T7/66 , G06T2207/20021 , G06T2207/30148
摘要： A system of examination of a semiconductor specimen, comprising a processor and memory circuitry (PMC) configured to:
obtain an image of a hole formed in the semiconductor specimen, wherein the hole exposes at least one layer of a plurality of layers of the semiconductor specimen,
segment the image into a plurality of regions,
generate at least one of:
data Dpix_intensity informative of one or more pixel intensities of one or more regions of the plurality of regions,
data Dgeometry informative of one or more geometrical properties of one or more regions of the plurality of regions,
feed at least one of Dpix_intensity or Dgeometry to a trained classifier to obtain an output, wherein the output of the trained classifier is usable to determine whether the hole ends at a target layer of the plurality of layers.-
公开(公告)号：US20220261979A1
公开(公告)日：2022-08-18
申请号：US17177119
申请日：2021-02-16
发明人： Jitendra Pradipkumar CHAUDHARY , Roman KRIS , Ran ALKOKEN , Sahar LEVIN , Chih-Chieh CHANG , Einat FRISHMAN
摘要： There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.
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公开(公告)号：US20220207681A1
公开(公告)日：2022-06-30
申请号：US17135939
申请日：2020-12-28
发明人： Roman KRIS , Grigory KLEBANOV , Einat FRISHMAN , Tal ORENSTEIN , Meir VENGROVER , Noa MAROM , Ilan BEN-HARUSH , Rafael BISTRITZER , Sharon DUVDEVANI-BAR
摘要： There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.
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公开(公告)号：US20170194125A1
公开(公告)日：2017-07-06
申请号：US14985847
申请日：2015-12-31
发明人： Roman KRIS , Yakov WEINBERG , Yan IVANCHENKO , Ishai SCHWARZBAND , Dan LANGE , Arbel ENGLANDER , Efrat NOIFELD , Ran GOLDMAN , Ori SHOVAL
IPC分类号： H01J37/22 , G01N23/225 , G01B15/04 , H01J37/28
CPC分类号： H01J37/222 , G01N23/2251 , G01N2223/401 , G01N2223/418 , G01N2223/6116 , G01N2223/646 , H01J37/28 , H01J2237/24592 , H01J2237/2813 , H01L22/12
摘要： A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.
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公开(公告)号：US20210383529A1
公开(公告)日：2021-12-09
申请号：US17281948
申请日：2019-10-31
发明人： Roman KRIS , Roi MEIR , Sahar LEVIN , Ishai SCHWARZBAND , Grigory KLEBANOV , Shimon LEVI , Efrat NOIFELD , Hiroshi MIROKU , Taku YOSHIZAWA , Kasturi SAHA , Sharon DUVDEVANI-BAR , Vadim VERESCHAGIN
摘要： A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.
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公开(公告)号：US20200327652A1
公开(公告)日：2020-10-15
申请号：US16652970
申请日：2018-10-01
发明人： Vadim VERESCHAGIN , Roman KRIS , Ishai SCHWARZBAND , Boaz COHEN , Ariel SHKALIM , Evgeny BAL
摘要： A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.
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公开(公告)号：US20180336675A1
公开(公告)日：2018-11-22
申请号：US15982918
申请日：2018-05-17
发明人： Ishai SCHWARZBAND , Yan AVNIEL , Sergey KHRISTO , Mor BARAM , Shimon LEVI , Doron GIRMONSKY , Roman KRIS
IPC分类号： G06T7/00
摘要： An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
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公开(公告)号：US20230069303A1
公开(公告)日：2023-03-02
申请号：US17465753
申请日：2021-09-02
发明人： Roman KRIS , Ilan BEN-HARUSH , Rafael BISTRITZER , Vadim VERESCHAGIN , Elad SOMMER , Grigory KLEBANOV , Arundeepth THAMARASSERY , Jannelle Anna GEVA , Gal Daniel GUTTERMAN , Einat FRISHMAN , Sahar LEVIN
摘要： There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.
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公开(公告)号：US20180268539A1
公开(公告)日：2018-09-20
申请号：US15918570
申请日：2018-03-12
发明人： Yakov WEINBERG , Ishai SCHWARZBAND , Roman KRIS , Itay ZAUER , Ran GOLDMAN , Olga NOVAK , Dhananjay Singh RATHORE , Ofer ADAN , Shimon LEVI
CPC分类号： G06T7/0006 , G06K9/525 , G06T7/001 , G06T7/10 , G06T7/11 , G06T7/12 , G06T7/143 , G06T7/194 , G06T7/30 , G06T7/337 , G06T2207/10061 , G06T2207/20116 , G06T2207/30148
摘要： A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.
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