公开(公告)号：US20230377125A1

公开(公告)日：2023-11-23

申请号：US17748996

申请日：2022-05-19

Applicant: Applied Materials Israel Ltd.

Inventor： Boaz DUDOVICH ,  Assaf ARIEL ,  Amir BAR ,  Lior YEHIELI ,  Chen ITZIKOWITZ ,  Shiran BEN ISRAEL ,  Lior KATZ ,  Eli Oren JONI ,  Eyal ROT

IPC: G06T7/00 ,  G06T3/00 ,  H04N7/01

CPC classification number: G06T7/001 ,  G06T3/0056 ,  H04N7/01 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: There is provided a system and method of defect detection of a semiconductor specimen. The method includes obtaining a first image of the specimen acquired at a first bit depth, converting by a first processor the first image to a second image with a second bit depth lower than the first bit depth, transmitting the second image to a second processor configured to perform first defect detection on the second image using a first defect detection algorithm to obtain a first set of defect candidates, and sending locations of the first set of defect candidates to the first processor, extracting, from the first image, a set of image patches corresponding to the first set of defect candidates based on the locations, and performing second defect detection on the set of image patches using a second defect detection algorithm to obtain a second set of defect candidates.

公开(公告)号：US20210042905A1

公开(公告)日：2021-02-11

申请号：US16533737

申请日：2019-08-06

Applicant: Applied Materials Israel Ltd.

Inventor： Elad COHEN ,  Yuri FEIGIN ,  Lior KATZ ,  Eyal NEISTEIN

IPC: G06T7/00 ,  G06T7/70

Abstract: A method and system for detecting defects in a specimen, the method comprising: obtaining an image comprising a plurality of pixels of a specimen part; processing the image according to a detection recipe to derive information related to potential defects in the specimen, said information comprising a first data set informative of first locations identified, in accordance with the detection recipe as locations of potential defects, and a second data set informative of second locations not identified as locations of potential defects; receiving data specifying targeted locations of interest within the part of the specimen; when the first data set is not informative of each targeted location, generating a third data set by adding to the first data set information related to the missing targeted location from the second data set, the information bearing an indication that it corresponds to a targeted location; and outputting the third data set.

公开(公告)号：US20250124307A1

公开(公告)日：2025-04-17

申请号：US18488888

申请日：2023-10-17

Applicant: Applied Materials Israel Ltd.

Inventor： Aviad YAHALOM ,  Chen RAICH ,  Karen POMERANZ ,  Lior KATZ ,  Marcelo BACHER ,  Tamir DUHOVNY

IPC: G06N5/022

Abstract: There is provided a system and method of defect examination on a semiconductor specimen. The method comprises: obtaining an inspection dataset informative of a group of defect candidates and attributes thereof resulting from examining the specimen by an inspection tool; classifying, by a classifier, the group of defect candidates into a plurality of defect classes such that each defect candidate is associated with a respective defect class; and ranking, by a decision model, the group of defect candidates into a total order using a sorting rule. Each defect candidate is associated with a distinct ranking in the total order representative of the likelihood of the defect candidate being a defect of interest (DOI). The decision model is previously trained to learn the sorting rule pertaining to the plurality of defect classes associated with the group of defect candidates and a series of attributes in the inspection data.