公开(公告)号：US20240428395A1

公开(公告)日：2024-12-26

申请号：US18214231

申请日：2023-06-26

Applicant: Applied Materials Israel Ltd.

Inventor： Rafael BISTRITZER ,  Ilan BEN-HARUSH ,  Mor BARAM ,  Tal BEN-SHLOMO ,  Nir BILLFELD (LEVI) ,  Noam TEOMIM

IPC: G06T7/00 ,  G06T7/60

Abstract: There is provided a metrology system and method. The method includes obtaining a set of tool parameters selected from multiple tool parameters characterizing the examination tool, varying a value of each tool parameter from the set a number of times, giving rise to a plurality of tool settings corresponding to a plurality of combinations of varying values of the set of tool parameters, configuring an examination tool with each given tool setting of the plurality of tool settings; and in response to receiving, from the examination tool, a plurality of sets of images corresponding to the plurality of tool settings and representing expected tool variations over time in a single tool or between different tools, optimizing a metrology algorithm using the plurality of sets of images so as to meet at least one metrology metric including tool matching.

公开(公告)号：US20180336675A1

公开(公告)日：2018-11-22

申请号：US15982918

申请日：2018-05-17

Applicant: Applied Materials Israel Ltd.

Inventor： Ishai SCHWARZBAND ,  Yan AVNIEL ,  Sergey KHRISTO ,  Mor BARAM ,  Shimon LEVI ,  Doron GIRMONSKY ,  Roman KRIS

IPC: G06T7/00

Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.