公开(公告)号：US20220301196A1

公开(公告)日：2022-09-22

申请号：US17209086

申请日：2021-03-22

Applicant: Applied Materials Israel Ltd.

Inventor： David ULIEL ,  Yan AVNIEL ,  Bobin Mathew SKARIA ,  Oz FOX-KAHANA ,  Gal Daniel GUTTERMAN ,  Atai BALDINGER ,  Murad MUSLIMANY ,  Erez LIDOR

IPC: G06T7/30 ,  G06T5/50 ,  G06T7/00 ,  G06K9/62 ,  H01J37/26

Abstract: There is provided a system and method of examination of a semiconductor specimen, comprising: obtaining a sequence of frames of an area of the specimen acquired by an electron beam tool configured to scan the area from a plurality of directions, the sequence comprising a plurality of sets of frames each acquired from a respective direction; and registering the plurality of sets of frames and generating an image of the specimen based on result of the registration, comprising: performing, for each direction, a first registration among the set of frames acquired therefrom, and combining the registered set of frames to generate a first composite frame, giving rise to a plurality of first composite frames respectively corresponding to the plurality of directions; and performing a second registration among the plurality of first composite frames, and combining the registered plurality of first composite frames to generate the image of the specimen.

公开(公告)号：US20180336675A1

公开(公告)日：2018-11-22

申请号：US15982918

申请日：2018-05-17

Applicant: Applied Materials Israel Ltd.

Inventor： Ishai SCHWARZBAND ,  Yan AVNIEL ,  Sergey KHRISTO ,  Mor BARAM ,  Shimon LEVI ,  Doron GIRMONSKY ,  Roman KRIS

IPC: G06T7/00

Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

公开(公告)号：US20180336671A1

公开(公告)日：2018-11-22

申请号：US15982876

申请日：2018-05-17

Applicant: Applied Materials Israel Ltd.

Inventor： Ishai SCHWARZBAND ,  Sergey KHRISTO ,  Yan AVNIEL

IPC: G06T7/00 ,  G06T7/564

Abstract: A height of a pattern on a semiconductor wafer is determined by comparing a measured image of the pattern with a predicted image of the pattern, as produced by a shadow model. An estimated height of the pattern is provided as an input to the shadow model. The shadow model produces occluding contours that are used to generate predicted images. A set of predicted images are generated, each predicted image being associated with an estimated height. The estimated height corresponding to the predicted image most closely matching with the measured image is used as the height calculated by the shadow model.