公开(公告)号：US20230023363A1

公开(公告)日：2023-01-26

申请号：US17382280

申请日：2021-07-21

Applicant: Applied Materials Israel Ltd.

Inventor： Michael CHEMAMA ,  Ron MEIRY ,  Moshe ELIASOF ,  Lior YARON ,  Guy EYTAN ,  Konstantin CHIRKO ,  Rafael BISTRITZER

IPC: G01N23/2206 ,  H01L21/66 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/28

Abstract: There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.