公开(公告)号：US09356422B2

公开(公告)日：2016-05-31

申请号：US14190765

申请日：2014-02-26

Applicant: Applied Optoelectronics, Inc.

Inventor： Klaus Alexander Anselm ,  Rajesh Bikky ,  Stephen Hu ,  Greg Pickrell ,  Nahid Sultana ,  Jae Yoon Um ,  Chia Chen David Wong

IPC: H01L21/78 ,  H01S5/00

CPC classification number: H01S5/00 ,  H01S5/0202 ,  H01S5/0203

Abstract: An improved scribe etch process for semiconductor laser chip manufacturing is provided. A method to etch a scribe line on a semiconductor wafer generally includes: applying a mask layer to a surface of the wafer; photolithographically opening a window in the mask layer along the scribe line; etching a trench in the wafer using a chemical etchant that operates on the wafer through the window opening, wherein the chemical etchant selectively etches through crystal planes of the wafer to generate a V-groove profile associated with the trench; and cleaving the wafer along the etched trench associated with the scribe line through application of a force to one or more regions of the wafer.

Abstract translation: 提供了一种用于半导体激光器芯片制造的改进的刻划蚀刻工艺。 蚀刻半导体晶片上的划线的方法通常包括：将掩模层施加到晶片的表面; 沿着划线光刻地在掩模层中打开窗口; 使用通过窗口在晶片上操作的化学蚀刻剂来蚀刻晶片中的沟槽，其中化学蚀刻剂选择性蚀刻晶片的晶面以产生与沟槽相关联的V形槽轮廓; 以及通过向所述晶片的一个或多个区域施加力而沿着与所述划线相关联的所述蚀刻沟槽切割所述晶片。

公开(公告)号：US20150243558A1

公开(公告)日：2015-08-27

申请号：US14190765

申请日：2014-02-26

Applicant: Applied Optoelectronics, Inc.

Inventor： Klaus Alexander Anselm ,  Rajesh Bikky ,  Stephen Hu ,  Greg Pickrell ,  Nahid Sultana ,  Jae Yoon Um ,  Chia Chen David Wong

IPC: H01L21/78 ,  H01L21/308

CPC classification number: H01S5/00 ,  H01S5/0202 ,  H01S5/0203

Abstract: An improved scribe etch process for semiconductor laser chip manufacturing is provided. A method to etch a scribe line on a semiconductor wafer generally includes: applying a mask layer to a surface of the wafer; photolithographically opening a window in the mask layer along the scribe line; etching a trench in the wafer using a chemical etchant that operates on the wafer through the window opening, wherein the chemical etchant selectively etches through crystal planes of the wafer to generate a V-groove profile associated with the trench; and cleaving the wafer along the etched trench associated with the scribe line through application of a force to one or more regions of the wafer.

Abstract translation: 提供了一种用于半导体激光器芯片制造的改进的刻划蚀刻工艺。 蚀刻半导体晶片上的划线的方法通常包括：将掩模层施加到晶片的表面; 沿着划线光刻地在掩模层中打开窗口; 使用通过窗口在晶片上操作的化学蚀刻剂来蚀刻晶片中的沟槽，其中化学蚀刻剂选择性蚀刻晶片的晶面以产生与沟槽相关联的V形槽轮廓; 以及通过向所述晶片的一个或多个区域施加力而沿着与所述划线相关联的所述蚀刻沟槽切割所述晶片。