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Patent Agency Ranking
公开(公告)号：US10672982B1
公开(公告)日：2020-06-02
申请号：US16206725
申请日：2018-11-30
Applicant: Arm Limited
Inventor： Ming He , Paul Raymond Besser , Jingyan Zhang , Manuj Rathor
Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.
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公开(公告)号：US20200176676A1
公开(公告)日：2020-06-04
申请号：US16206725
申请日：2018-11-30
Applicant: Arm Limited
Inventor： Ming He , Paul Raymond Besser , Jingyan Zhang , Manuj Rathor
Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.
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公开(公告)号：US20200295259A1
公开(公告)日：2020-09-17
申请号：US16890881
申请日：2020-06-02
Applicant: Arm Limited
Inventor： Ming He , Paul Raymond Besser , Jingyan Zhang , Manuj Rathor
Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.
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公开(公告)号：US10707415B2
公开(公告)日：2020-07-07
申请号：US16200214
申请日：2018-11-26
Applicant: Arm Limited
Inventor： Lucian Shifren , Kimberly Gay Reid , Gregory Munson Yeric , Manuj Rathor , Glen Arnold Rosendale
Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
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公开(公告)号：US20190173008A1
公开(公告)日：2019-06-06
申请号：US16200214
申请日：2018-11-26
Applicant: Arm Limited
Inventor： Lucian Shifren , Kimberly Gay Reid , Gregory Munson Yeric , Manuj Rathor , Glen Arnold Rosendale
Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
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