Memory Structure with Bitline Strapping
    2.
    发明申请

    公开(公告)号:US20200286548A1

    公开(公告)日:2020-09-10

    申请号:US16294577

    申请日:2019-03-06

    Applicant: Arm Limited

    Abstract: Various implementations described herein refer to an integrated circuit having an array of bitcells coupled between at least one pair of bitlines including a first bitline and a second bitline that is a complement of the first bitline. The integrated circuit may include at least one pair of ancillary lines disposed adjacent to the at least one pair of bitlines, and the at least one pair of ancillary lines include a first ancillary line disposed adjacent to the first bitline and a second ancillary line disposed adjacent to the second bitline. The integrated circuit may include multiple pairs of passgates coupled between the at least one pair of bitlines and the at least one pair of ancillary lines.

    Standard cell architecture
    3.
    发明授权

    公开(公告)号:US11967551B2

    公开(公告)日:2024-04-23

    申请号:US17224898

    申请日:2021-04-07

    Applicant: Arm Limited

    CPC classification number: H01L23/5226 H01L23/528

    Abstract: Various implementations described herein are directed to a device having a switch structure having an input and an output. The device may have a first thru-silicon via that couples a first backside signal to the input of the switch structure. The device may have a second thru-silicon via that couples a second backside signal to the output of the switch structure.

    Standard Cell Architecture
    4.
    发明申请

    公开(公告)号:US20220328399A1

    公开(公告)日:2022-10-13

    申请号:US17224898

    申请日:2021-04-07

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to a device having a switch structure having an input and an output. The device may have a first thru-silicon via that couples a first backside signal to the input of the switch structure. The device may have a second thru-silicon via that couples a second backside signal to the output of the switch structure.

    Memory structure with bitline strapping

    公开(公告)号:US11011222B2

    公开(公告)日:2021-05-18

    申请号:US16294577

    申请日:2019-03-06

    Applicant: Arm Limited

    Abstract: Various implementations described herein refer to an integrated circuit having an array of bitcells coupled between at least one pair of bitlines including a first bitline and a second bitline that is a complement of the first bitline. The integrated circuit may include at least one pair of ancillary lines disposed adjacent to the at least one pair of bitlines, and the at least one pair of ancillary lines include a first ancillary line disposed adjacent to the first bitline and a second ancillary line disposed adjacent to the second bitline. The integrated circuit may include multiple pairs of passgates coupled between the at least one pair of bitlines and the at least one pair of ancillary lines.

    Integration fill technique
    6.
    发明授权

    公开(公告)号:US10083833B1

    公开(公告)日:2018-09-25

    申请号:US15629684

    申请日:2017-06-21

    Applicant: ARM Limited

    Abstract: Various implementations described herein are directed to a method for manufacturing an integrated circuit. The method may include defining multiple lithographic regions for the integrated circuit, and the multiple lithographic regions may include a first lithographic region and a second lithographic region. The method may include defining an anchor in the first lithographic region and defining a target in the second lithographic region. The method may include defining a spacing interval between the anchor and the target. The method may include inserting an integration fill in the spacing interval.

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