公开(公告)号：US06472332B1

公开(公告)日：2002-10-29

申请号：US09723243

申请日：2000-11-28

申请人： Arthur M. Gooray ,  George J. Roller ,  Joseph M. Crowley ,  Paul C. Galambos ,  Frank J. Peter ,  Kevin R. Zavadil ,  Richard C. Givler ,  Randy J. Shul ,  Christi Willison Gober

发明人： Arthur M. Gooray ,  George J. Roller ,  Joseph M. Crowley ,  Paul C. Galambos ,  Frank J. Peter ,  Kevin R. Zavadil ,  Richard C. Givler ,  Randy J. Shul ,  Christi Willison Gober

IPC分类号： H01L21302

CPC分类号： H01L21/3088 ,  B41J2/16 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B81B2201/038 ,  H01L21/30655

摘要： Structures for use in conjunction with surface micromachined structures are formed using a two-step etching process. In various exemplary embodiments, the two-step etching process comprises a modified Bosch etch. According to various exemplary embodiments of the two-step etch, first mask and second masks are used to prepare a layer for etching one or more desired structures. The first mask is used to define at least one large feature. The second mask is used to define at least one small feature (small as compared to the at least one large feature). The second mask is formed over the first mask which is formed over the layer. In the first etching step, the at least one small feature is etched into the layer. Then, the second mask is removed using the chemical rinsing agent. In the second etching step, the at least one large feature is etched into the layer such that the at least one small feature propagates further into the layer ahead of the at least one large feature. The first mask is then removed. Other surface micromachined methods and structures are provided as well.

摘要翻译： 与表面微加工结构结合使用的结构使用两步蚀刻工艺形成。 在各种示例性实施例中，两步蚀刻工艺包括经修改的博世蚀刻。 根据两步蚀刻的各种示例性实施例，使用第一掩模和第二掩模来制备蚀刻一个或多个所需结构的层。 第一个掩模用于定义至少一个大的特征。 第二个掩模用于定义至少一个小特征（与至少一个大特征相比较小）。 第二掩模形成在形成在该层上的第一掩模上。 在第一蚀刻步骤中，至少一个小特征被蚀刻到该层中。 然后，使用化学漂洗剂除去第二面罩。 在第二蚀刻步骤中，至少一个大特征被蚀刻到层中，使得至少一个小特征进一步传播到至少一个大特征之前的层中。 然后删除第一个面具。 还提供了其他表面微加工方法和结构。