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    Fabrication process for bonded wafer precision layer thickness control and its non-destructructive measurement method
    1.
    发明申请
    Fabrication process for bonded wafer precision layer thickness control and its non-destructructive measurement method 有权
    贴片晶圆精密层厚度控制及其非破坏性测量方法的制作工艺

    公开(公告)号：US20030224610A1

    公开(公告)日：2003-12-04

    申请号：US10155008

    申请日：2002-05-28

    申请人： ASIA PACIFIC MICROSYSTEMS, INC.

    发明人： Hung-Dar Wang ,  Ruey-Shing Huang ,  Shih-Chin Gong ,  Chung-Yang Tseng

    IPC分类号： H01L021/00 ,  H01L021/302 ,  H01L021/461

    CPC分类号： B24B37/005 ,  H01L22/34

    摘要： A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.

    摘要翻译： 一种用于通过各向异性蚀刻在硅晶片衬底上制造厚度检查图案的硅晶片厚度测量方法，然后用抛光机抛光晶片; 因此可以在抛光进行后获得具有所需厚度的晶片; 上晶片的厚度由所述检查图案确定，然后按厚度分选晶片; 因此可以将其应用于需要具有这种精确厚度的晶片的MEMS微加工器件。

    Film bulk acoustic device with integrated tunable and trimmable device
    2.
    发明申请
    Film bulk acoustic device with integrated tunable and trimmable device 失效
    具有集成可调谐和可调节装置的胶片声音装置

    公开(公告)号：US20030205948A1

    公开(公告)日：2003-11-06

    申请号：US10253861

    申请日：2002-09-25

    申请人： Asia Pacific Microsystems, Inc.

    发明人： Chung-Hsien Lin ,  Shu-Hui Tsai ,  Chen-Hsun Du ,  Ruey-Shing Huang

    IPC分类号： H01L041/08

    CPC分类号： H03H3/04 ,  H03H9/542 ,  H03H2003/0071 ,  H03H2003/0464

    摘要： A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

    摘要翻译： 具有集成可调整装置的胶片体音响装置包括一个FBAR和集成的可调和可调整装置，其集成在共同的基板上，至少是公共电极或压电层。 通过修整集成可调整装置或FBAR，并改变集成可调整装置的电容或电感，直到具有集成可调整装置的胶片体声装置达到目标共振频率。 通过利用静电力，集成的可调谐装置能够提供调谐，直到具有集成的可调谐装置的膜体音响装置达到目标共振频率。