公开(公告)号：US20180337650A1

公开(公告)日：2018-11-22

申请号：US15815966

申请日：2017-11-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H03H3/007 ,  H03H3/04 ,  H03H9/00 ,  H03H7/42

CPC classification number: H03H3/0077 ,  H03H3/02 ,  H03H3/04 ,  H03H7/422 ,  H03H9/0095 ,  H03H9/0542 ,  H03H9/173 ,  H03H2003/0071 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.

公开(公告)号：US20170140085A1

公开(公告)日：2017-05-18

申请号：US15379850

申请日：2016-12-15

Applicant: RESONANT INC.

Inventor： Sean McHugh ,  Neal O. Fenzi

IPC: G06F17/50 ,  H03H3/08

CPC classification number: G06F17/5068 ,  G06F3/162 ,  G06F17/5009 ,  G06F17/5036 ,  G06F17/504 ,  G06F17/5045 ,  G06F17/505 ,  G06F17/5063 ,  G06F17/5081 ,  G06F2217/16 ,  G06F2217/80 ,  H03H3/08 ,  H03H9/465 ,  H03H9/542 ,  H03H9/605 ,  H03H9/6483 ,  H03H2003/0071

Abstract: A method of designing an acoustic microwave filter comprises generating a proposed filter circuit design having an acoustic resonant element with a defined admittance value, introducing a lumped capacitive element in parallel and a lumped inductive element in series with the resonant element, selecting a first capacitance value for the capacitive element and a first inductance value for the inductive element, thereby creating a first temperature modeled filter circuit design, simulating the first temperature modeled filter circuit design at a first operating temperature, thereby generating a first frequency response, selecting a second capacitance value for the capacitive element and a second inductance value for the inductive element, thereby creating a second temperature modeled filter circuit design, simulating the second temperature modeled filter circuit design at a second operating temperature, thereby generating a second frequency response, and comparing the first and second frequency responses to the frequency response requirements.

公开(公告)号：US09405875B1

公开(公告)日：2016-08-02

申请号：US14941462

申请日：2015-11-13

Applicant: RESONANT INC.

Inventor： Sean McHugh ,  Neal O. Fenzi

IPC: G06F17/50

CPC classification number: G06F17/5036 ,  G06F3/162 ,  G06F17/5009 ,  G06F17/504 ,  G06F17/5045 ,  G06F17/505 ,  G06F17/5063 ,  G06F2217/16 ,  G06F2217/80 ,  H03H3/08 ,  H03H9/465 ,  H03H9/542 ,  H03H9/605 ,  H03H9/6483 ,  H03H2003/0071

Abstract: A method of designing an acoustic microwave filter comprises generating a proposed filter circuit design having an acoustic resonant element with a defined admittance value, introducing a lumped capacitive element in parallel and a lumped inductive element in series with the resonant element, selecting a first capacitance value for the capacitive element and a first inductance value for the inductive element, thereby creating a first temperature modeled filter circuit design, simulating the first temperature modeled filter circuit design at a first operating temperature, thereby generating a first frequency response, selecting a second capacitance value for the capacitive element and a second inductance value for the inductive element, thereby creating a second temperature modeled filter circuit design, simulating the second temperature modeled filter circuit design at a second operating temperature, thereby generating a second frequency response, and comparing the first and second frequency responses to the frequency response requirements.

Abstract translation: 一种设计声波微波滤波器的方法包括产生一个所提出的滤波器电路设计，其具有具有限定导纳值的声谐振元件，并联集成电容元件和与谐振元件串联的集总电感元件，选择第一电容值 对于电容元件和电感元件的第一电感值，从而产生第一温度建模的滤波器电路设计，在第一工作温度下模拟第一温度建模滤波器电路设计，从而产生第一频率响应，选择第二电容值 对于电容元件和电感元件的第二电感值，从而产生第二温度建模滤波器电路设计，在第二工作温度下模拟第二温度建模滤波器电路设计，从而产生第二频率响应，并且比较第一和第 第二个频率 对频率响应要求的响应。

公开(公告)号：US09106199B2

公开(公告)日：2015-08-11

申请号：US13500614

申请日：2010-10-04

Applicant: Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

Inventor： Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

IPC: H03H3/08 ,  H03H3/02 ,  H03H3/007

CPC classification number: H03H3/08 ,  H03H3/02 ,  H03H2003/0071 ,  Y10T29/42

Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.

Abstract translation: 一种声波装置，包括至少一个表面声波滤波器和一个体声波滤波器，该装置包括在包括第二压电材料的基板上，包括第一金属层和第一单晶压电材料层 其中，所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化，用于限定集成第一压电材料的体声滤波器，以及在第二区域处的第三金属化，用于限定整合第二压电材料的表面声波滤波器。

公开(公告)号：US20030205948A1

公开(公告)日：2003-11-06

申请号：US10253861

申请日：2002-09-25

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Chung-Hsien Lin ,  Shu-Hui Tsai ,  Chen-Hsun Du ,  Ruey-Shing Huang

IPC: H01L041/08

CPC classification number: H03H3/04 ,  H03H9/542 ,  H03H2003/0071 ,  H03H2003/0464

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract translation: 具有集成可调整装置的胶片体音响装置包括一个FBAR和集成的可调和可调整装置，其集成在共同的基板上，至少是公共电极或压电层。 通过修整集成可调整装置或FBAR，并改变集成可调整装置的电容或电感，直到具有集成可调整装置的胶片体声装置达到目标共振频率。 通过利用静电力，集成的可调谐装置能够提供调谐，直到具有集成的可调谐装置的膜体音响装置达到目标共振频率。

公开(公告)号：US09021669B2

公开(公告)日：2015-05-05

申请号：US12376546

申请日：2007-08-07

Applicant: Toru Fukano

Inventor： Toru Fukano

IPC: H03H9/15 ,  H03H3/08 ,  H03H9/05 ,  H03H9/145 ,  H01L41/23 ,  H01L41/27 ,  H03H9/10 ,  H05K1/14 ,  H05K3/34

CPC classification number: H03H3/08 ,  H01L41/23 ,  H01L41/27 ,  H01L2224/11 ,  H01L2224/94 ,  H01L2924/16235 ,  H03H3/007 ,  H03H9/008 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/1092 ,  H03H9/14582 ,  H03H2003/0071 ,  H05K1/144 ,  H05K3/3426 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49144 ,  Y10T29/49155

Abstract: Provided is a method for manufacturing a surface acoustic wave apparatus that can reduce degradation of electric characteristics and also reduce the number of manufacturing processes. The method for manufacturing a surface acoustic wave apparatus includes the steps of: forming an IDT electrode on an upper surface of a piezoelectric substrate, forming a frame member surrounding a formation area in which the IDT electrode is formed on the piezoelectric substrate, and mounting a film-shaped lid member on the upper surface of the frame member so as to be joined to the frame member so that a protective cover, used for covering the formation area and for providing a tightly-closed space between it and the formation area, is formed.

Abstract translation: 提供一种能够降低电特性劣化并且还减少制造工艺数的表面声波装置的制造方法。 表面声波装置的制造方法包括以下步骤：在压电基板的上表面上形成IDT电极，在压电基板上形成围绕形成有IDT电极的形成区域的框架部件， 在框架构件的上表面上形成薄膜状的盖构件，以便与框架构件接合，从而用于覆盖形成区域并在其与形成区域之间提供紧密封闭的空间的保护盖是 形成。

公开(公告)号：US20110180391A1

公开(公告)日：2011-07-28

申请号：US12692108

申请日：2010-01-22

Applicant: John Larson, III ,  Sergey Mishin

Inventor： John Larson, III ,  Sergey Mishin

IPC: C23C14/34

CPC classification number: C23C14/0617 ,  C23C14/0036 ,  C23C14/02 ,  C23C14/022 ,  C23C14/0641 ,  C23C14/228 ,  C23C14/345 ,  H03H2003/0071

Abstract: In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (CN) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.

Abstract translation: 根据代表性实施例，制造包括第一部件和第二部件的压电材料的方法包括：提供基板; 在基板上流动氢气; 使第一部件流动以在靶上形成压电材料; 并从基板上的靶溅射压电材料。 根据另一代表性实施例，制造体声波（BAW）谐振器的方法包括：在衬底上形成第一电极; 在衬底上形成种子层; 并沉积具有压缩 - 负（CN）极性的压电材料。 压电材料的沉积包括：流过压电材料的第一部件以在包括压电材料的第二部件的靶上形成压电材料; 并将压电材料从靶溅射到衬底。

公开(公告)号：US20100058568A1

公开(公告)日：2010-03-11

申请号：US12620264

申请日：2009-11-17

Applicant: Kuang-woo NAM ,  Chul-soo Kim ,  In-sang Song ,  Yun-kwon Park ,  Eun-seok Park

Inventor： Kuang-woo NAM ,  Chul-soo Kim ,  In-sang Song ,  Yun-kwon Park ,  Eun-seok Park

IPC: H01L41/22

CPC classification number: H03H9/46 ,  H03H3/02 ,  H03H3/08 ,  H03H9/105 ,  H03H9/1092 ,  H03H9/54 ,  H03H9/64 ,  H03H9/703 ,  H03H9/706 ,  H03H9/72 ,  H03H9/725 ,  H03H2003/0071 ,  Y10T29/42

Abstract: A multi-band filter module and a method of fabricating the same are provided. The multi-band filter module includes a piezoelectric substrate, a first filter provided on the piezoelectric substrate, and a second filter provided adjacent to the first filter on the piezoelectric substrate, and operating in a frequency band that is lower than that of the first filter.

Abstract translation: 提供了一种多频带滤波器模块及其制造方法。 多频带滤波器模块包括压电基板，设置在压电基板上的第一滤波器和与压电基板上的第一滤波器相邻设置的第二滤波器，并且在低于第一滤波器的频带中操作 。

公开(公告)号：US06924583B2

公开(公告)日：2005-08-02

申请号：US10253861

申请日：2002-09-25

Applicant: Chung-Hsien Lin ,  Shu-Hui Tsai ,  Chen-Hsun Du ,  Ruey-Shing Hunag

Inventor： Chung-Hsien Lin ,  Shu-Hui Tsai ,  Chen-Hsun Du ,  Ruey-Shing Hunag

IPC: H03H3/04 ,  H01L41/04 ,  H01L27/02

CPC classification number: H03H3/04 ,  H03H9/542 ,  H03H2003/0071 ,  H03H2003/0464

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract translation: 具有集成可调整装置的胶片体音响装置包括一个FBAR和集成的可调和可调整装置，其集成在共同的基板上，至少是公共电极或压电层。 通过修整集成可调整装置或FBAR，并改变集成可调整装置的电容或电感，直到具有集成可调整装置的胶片体声装置达到目标共振频率。 通过利用静电力，集成的可调谐装置能够提供调谐，直到具有集成的可调谐装置的膜体音响装置达到目标共振频率。

公开(公告)号：US20040007940A1

公开(公告)日：2004-01-15

申请号：US10194215

申请日：2002-07-15

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Shu-Hui Tsai ,  Ching-Yee Chang ,  Chung-Hsien Lin

IPC: H03H009/25

CPC classification number: H03H9/02031 ,  H03H3/02 ,  H03H9/02543 ,  H03H9/171 ,  H03H9/172 ,  H03H2003/0071

Abstract: A thin film acoustic wave device and the manufacturing method thereof, it provides a method of manufacturing acoustic wave devices of different FOM (figures of merit) by means of the crystalline orientation of the piezoelectric layer in cooperated with the various electric field directions of the driving electrode, so as to provide acoustic wave devices that are optimized under various specifications.

Abstract translation: 一种薄膜声波装置及其制造方法，其提供了通过与驱动的各种电场方向配合的压电层的结晶取向来制造不同FOM（品质因数）的声波装置的方法 电极，以提供在各种规格下优化的声波装置。