公开(公告)号：US09001859B2

公开(公告)日：2015-04-07

申请号：US13577858

申请日：2011-01-27

申请人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

发明人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S5/20

CPC分类号： H01S5/1231 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3235 ,  H01S2304/04

摘要： The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.

摘要翻译： 脊状半导体激光器是其中由AlInAs化合物制成的载流子停止层，由AlGaInAs化合物制成的覆盖层和由InGaAsP化合物制成的蚀刻停止层的半导体激光器依次堆叠在有源层的一侧 由AlGaInAs化合物制成。 脊状半导体激光器设置有脊波导，该脊波导包括在由InP化合物制成的层中，在蚀刻停止层的包覆层的相对侧上由InGaAsP化合物制成的衍射光栅。

公开(公告)号：US20120314727A1

公开(公告)日：2012-12-13

申请号：US13577858

申请日：2011-01-27

申请人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

发明人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

IPC分类号： H01S5/323 ,  H01L21/02

CPC分类号： H01S5/1231 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3235 ,  H01S2304/04

摘要： The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.

摘要翻译： 脊状半导体激光器是其中由AlInAs化合物制成的载流子停止层，由AlGaInAs化合物制成的覆盖层和由InGaAsP化合物制成的蚀刻停止层的半导体激光器依次堆叠在有源层的一侧 由AlGaInAs化合物制成。 脊状半导体激光器设置有脊波导，该脊波导包括在由InP化合物制成的层中，在蚀刻停止层的包覆层的相对侧上由InGaAsP化合物制成的衍射光栅。