公开(公告)号：US20160071961A1

公开(公告)日：2016-03-10

申请号：US14622929

申请日：2015-02-16

Applicant: Au Optronics Corporation

Inventor： Liang-Yu Lin ,  Chun-Cheng Cheng

IPC: H01L29/66 ,  C30B35/00 ,  H01L29/24 ,  C30B33/00 ,  H01L21/441 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/441 ,  H01L29/24

Abstract: A method for fabricating a thin film transistor (TFT) is provided, and the method includes following steps. A gate and an insulation layer are sequentially formed on a substrate. A source electrode and a drain electrode are formed on the insulation layer. A solution type metal oxide precursor is coated on the insulation layer above the gate. A gas is provided, and the gas does not react with the solution type metal oxide precursor. An illumination process is performed on the solution type metal oxide precursor, so as to form a metal oxide semiconductor material through a photo cross-linking reaction of the solution type metal oxide precursor.

Abstract translation: 提供了制造薄膜晶体管（TFT）的方法，该方法包括以下步骤。 在衬底上依次形成栅极和绝缘层。 源电极和漏电极形成在绝缘层上。 溶液型金属氧化物前体被涂覆在栅极上方的绝缘层上。 提供气体，并且气体不与溶液型金属氧化物前体反应。 对溶液型金属氧化物前体进行照射处理，以通过溶液型金属氧化物前体的光交换反应形成金属氧化物半导体材料。