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1.发明授权Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime 有权通过先进的积分方式形成包括导电盖层的铜基金属化层的方法公开(公告)号：US07745327B2
公开(公告)日：2010-06-29
申请号：US11761444
申请日：2007-06-12
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76802 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.
摘要翻译： 通过适当地设计多个沉积步骤和中间溅射工艺，通孔开口内的阻挡材料的形成可以基于高效的工艺策略来实现，该方法可以容易地将形成在含金属区域上方的导电盖层整合到井下， 批准的过程序列。
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公开(公告)号：US20080182406A1
公开(公告)日：2008-07-31
申请号：US11761444
申请日：2007-06-12
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76802 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.
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3.发明申请METHOD OF FORMING A COPPER-BASED METALLIZATION LAYER INCLUDING A CONDUCTIVE CAP LAYER BY AN ADVANCED INTEGRATION REGIME 审中-公开通过高级集成方案形成包含导电层的基于铜的金属化层的方法公开(公告)号：US20080206986A1
公开(公告)日：2008-08-28
申请号：US11871247
申请日：2007-10-12
IPC分类号： H01L21/441
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76846 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.
摘要翻译： 通过适当地设计多个沉积步骤和中间溅射工艺，通孔开口内的阻挡材料的形成可以基于高效的工艺策略来实现，该方法可以容易地将形成在含金属区域上方的导电盖层整合到井下， 批准的过程序列。
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