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    Process for the generation of thin inorganic films
    2.
    发明授权
    Process for the generation of thin inorganic films 有权

    公开(公告)号：US11180852B2

    公开(公告)日：2021-11-23

    申请号：US16322999

    申请日：2017-08-23

    Applicant: BASF SE

    Inventor： Torben Adermann ,  Falko Abels ,  Carolin Limburg ,  Hagen Wilmer ,  Jan Gerkens ,  Sven Schneider

    IPC: C23C16/455 ,  C07F15/06 ,  C23C16/18

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

    Process for the generation of thin inorganic films
    3.
    发明授权
    Process for the generation of thin inorganic films 有权

    公开(公告)号：US10801105B2

    公开(公告)日：2020-10-13

    申请号：US15775856

    申请日：2016-11-18

    Applicant: BASF SE

    Inventor： Torben Adermann ,  Daniel Loeffler ,  Carolin Limburg ,  Falko Abels ,  Hagen Wilmer ,  Monica Gill ,  Matthew Griffiths ,  Sean Barry

    IPC: C23C16/18 ,  C07F15/06 ,  C23C16/455

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

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