公开(公告)号：US10669297B2

公开(公告)日：2020-06-02

申请号：US15779893

申请日：2016-11-30

Applicant: BASF SE

Inventor： Torben Adermann ,  Daniel Loeffler ,  Hagen Wilmer ,  Kerstin Schierle-Arndt ,  Jan Gerkens ,  Christian Volkmann ,  Sven Schneider

IPC: C09D1/00 ,  C07F15/06 ,  C23C16/18 ,  C23C16/455 ,  C01B33/06 ,  C09D5/02 ,  H01L21/285 ,  H01L21/768

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

公开(公告)号：US11180852B2

公开(公告)日：2021-11-23

申请号：US16322999

申请日：2017-08-23

Applicant: BASF SE

Inventor： Torben Adermann ,  Falko Abels ,  Carolin Limburg ,  Hagen Wilmer ,  Jan Gerkens ,  Sven Schneider

IPC: C23C16/455 ,  C07F15/06 ,  C23C16/18

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.