公开(公告)号：US10801105B2

公开(公告)日：2020-10-13

申请号：US15775856

申请日：2016-11-18

Applicant: BASF SE

Inventor： Torben Adermann ,  Daniel Loeffler ,  Carolin Limburg ,  Falko Abels ,  Hagen Wilmer ,  Monica Gill ,  Matthew Griffiths ,  Sean Barry

IPC: C23C16/18 ,  C07F15/06 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

公开(公告)号：US10787738B2

公开(公告)日：2020-09-29

申请号：US16063603

申请日：2017-01-17

Applicant: BASF SE

Inventor： Falko Abels ,  Daniel Loeffler ,  Hagen Wilmer ,  Robert Wolf ,  Christian Roedl ,  Philipp Bueschelberger

IPC: C23C16/18 ,  C23C16/448 ,  C07F15/06 ,  C23C16/455 ,  C07F9/6568 ,  C23C16/34 ,  C23C16/40 ,  C01B21/06 ,  C01G51/04 ,  C01G53/04

Abstract: Processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, a process of bringing a compound of general formula (I) into the gaseous or aerosol state Ln - - - M - - - Xm  (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

公开(公告)号：US11180852B2

公开(公告)日：2021-11-23

申请号：US16322999

申请日：2017-08-23

Applicant: BASF SE

Inventor： Torben Adermann ,  Falko Abels ,  Carolin Limburg ,  Hagen Wilmer ,  Jan Gerkens ,  Sven Schneider

IPC: C23C16/455 ,  C07F15/06 ,  C23C16/18

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

公开(公告)号：US10570514B2

公开(公告)日：2020-02-25

申请号：US15779570

申请日：2016-11-29

Applicant: BASF SE

Inventor： Falko Abels ,  David Dominique Schweinfurth ,  Karl Matos ,  Daniel Loeffler ,  Maraike Ahlf ,  Florian Blasberg ,  Thomas Schaub ,  Jan Spielmann ,  Axel Kirste ,  Boris Gaspar

IPC: C23C16/455 ,  C23C16/06 ,  C07F9/6584 ,  C07F9/50 ,  C07F7/10 ,  C07F9/52

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.