公开(公告)号：US20210324516A1

公开(公告)日：2021-10-21

申请号：US17259666

申请日：2019-07-04

Applicant: BASF SE

Inventor： David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sinja Verena KLENK ,  David SCHESCHKEWITZ ,  Kinga Izabela LESZCZYNSKA

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/34 ,  C23C16/32 ,  C23C16/36

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20190309417A1

公开(公告)日：2019-10-10

申请号：US16338915

申请日：2017-10-18

Applicant: BASF SE

Inventor： Maraike AHLF ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Kinga Izabela LESZCZYNSKA ,  David SCHESCHKEWITZ

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.