公开(公告)号：US20220298637A1

公开(公告)日：2022-09-22

申请号：US17616736

申请日：2020-05-27

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena KLENK ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sabine WEIGUNY ,  Charles Winter ,  Nilanka WEERATHUNGA SIRIKKATHUGE ,  Tharindu KARUNARATNE

IPC: C23C16/455 ,  C07F5/06

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR2, PR, PR2, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.

公开(公告)号：US20190309417A1

公开(公告)日：2019-10-10

申请号：US16338915

申请日：2017-10-18

Applicant: BASF SE

Inventor： Maraike AHLF ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Kinga Izabela LESZCZYNSKA ,  David SCHESCHKEWITZ

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.

公开(公告)号：US20220298638A1

公开(公告)日：2022-09-22

申请号：US17616751

申请日：2020-05-27

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena KLENK ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sabine WEIGUNY ,  Charles WINTER ,  Nilanka WEERATHUNGA SIRIKKATHUGE

IPC: C23C16/455 ,  C07F5/06

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV) . . . (V) (VI) (VII) wherein A is NR or O, E is CR″, CNR″2, N, PR″2, or SOR″, G is CR′ or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R′ and R″ are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210324516A1

公开(公告)日：2021-10-21

申请号：US17259666

申请日：2019-07-04

Applicant: BASF SE

Inventor： David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sinja Verena KLENK ,  David SCHESCHKEWITZ ,  Kinga Izabela LESZCZYNSKA

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/34 ,  C23C16/32 ,  C23C16/36

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210262091A1

公开(公告)日：2021-08-26

申请号：US17251250

申请日：2019-06-04

Applicant: BASF SE

Inventor： David Dominique SCHWEINFURTH ,  Sabine WEIGUNY ,  Lukas MAYR ,  Sinja Verena KLENK

IPC: C23C16/455 ,  C07F17/00 ,  C23C16/08 ,  C23C16/56

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. The present invention relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semi-metal-containing compound in contact with a compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie), wherein E is Ti, Zr, Hf, V, Nb, or Ta, L1 and L2 is a pentadienyl or a cyclopentadienyl ligand, and X1 and X2 is nothing or a neutral ligand, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, and R26 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for compound (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and A is an alkyl group, an alkenyl group, an aryl group or a silyl group.

公开(公告)号：US20190144998A1

公开(公告)日：2019-05-16

申请号：US15779570

申请日：2016-11-29

Applicant: BASF SE

Inventor： Falko ABELS ,  David Dominique SCHWEINFURTH ,  Karl MATOS ,  Daniel LOEFFLER ,  Maraike AHLF ,  Florian BLASBERG ,  Thomas SCHAUB ,  Jan SPIELMANN ,  Axel KIRSTE ,  Boris GASPAR

IPC: C23C16/455 ,  C07F9/50 ,  C07F9/6584 ,  C23C16/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.