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1.发明授权Post chemical-mechanical-polishing (post-CMP) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol or a polycarboxylic acid 有权包含特定含硫化合物和糖醇或多元羧酸的后化学机械抛光（CMP后）清洁组合物公开(公告)号：US09458415B2
公开(公告)日：2016-10-04
申请号：US14376978
申请日：2013-01-24
Applicant: BASF SE
Inventor： Yuzhuo Li , Shyam Sundar Venkataraman , Mingjie Zhong
CPC classification number: C11D3/3427 , C11D1/722 , C11D3/2065 , C11D3/2082 , C11D3/2086 , C11D3/349 , C11D3/3757 , C11D7/261 , C11D7/268 , C11D7/34 , C11D11/0047 , C11D11/0064 , H01L21/02074
Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C═S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.
Abstract translation: 后化学机械抛光（CMP后）清洁组合物，其包含：（A）至少一种包含至少一种硫醇（-SH），硫醚（-SR1）或硫代羰基（> C = S））的化合物，其中R1 （B）至少一种含有至少三个羟基（-OH）基团并且不包含任何羧酸（-COOH）或羧酸酯（-COO-）基团的糖醇和（B） C）水性介质。
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2.发明申请POST CHEMICAL-MECHANICAL-POLISHING (POST-CMP) CLEANING COMPOSITION COMPRISING A SPECIFIC SULFUR-CONTAINING COMPOUND AND A SUGAR ALCOHOL OR A POLYCARBOXYLIC ACID 有权后期化学机械抛光（后CMP）清洁组合物，其包含特定含硫化合物和糖酒精或聚碳酸公开(公告)号：US20150018261A1
公开(公告)日：2015-01-15
申请号：US14376978
申请日：2013-01-24
Applicant: BASF SE
Inventor： Yuzhuo Li , Shyam Sundar Venkataraman , Mingjie Zhong
CPC classification number: C11D3/3427 , C11D1/722 , C11D3/2065 , C11D3/2082 , C11D3/2086 , C11D3/349 , C11D3/3757 , C11D7/261 , C11D7/268 , C11D7/34 , C11D11/0047 , C11D11/0064 , H01L21/02074
Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C═S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.
Abstract translation: 后化学机械抛光（CMP后）清洁组合物，其包含：（A）至少一种包含至少一种硫醇（-SH），硫醚（-SR1）或硫代羰基（> C = S））的化合物，其中R1 （B）至少一种含有至少三个羟基（-OH）基团并且不包含任何羧酸（-COOH）或羧酸酯（-COO-）基团的糖醇和（B） C）水性介质。
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