公开(公告)号：US11110433B2

公开(公告)日：2021-09-07

申请号：US16084263

申请日：2017-03-17

Applicant: BASF SE

Inventor： Xu Yuan Peng ,  Rosalba Adriana Ricon-Ovalles ,  Shyam Sundar Venkataraman ,  Domnik Bayer ,  Andreas Haas

IPC: B01J23/14 ,  B01J23/18 ,  B01J35/10 ,  B01J37/03 ,  B01J37/08 ,  H01M4/90 ,  H01M4/88 ,  H01M4/92 ,  C25B1/04 ,  C25B9/73 ,  C25B11/093 ,  B01J35/00 ,  H01M8/1018

Abstract: The present invention relates to a metal-doped tin oxide which has a BET surface area of at least 30 m 2/g, and comprises at least one metal dopant which is Sb, Nb, Ta, Bi, W, or In, or any mixture thereof, wherein the metal dopant is present in an amount of from 2.5 at % to 25 at %, based on the total amount of tin and metal dopant atoms, and is in a mixed valence state containing atoms of oxidation state OS1 and atoms of oxidation state OS2, wherein the oxidation state OS1 is >0 and the oxidation state OS2 is >OS1 and the atomic ratio of the atoms of OS2 to the atoms of OS1 is from 1.5 to 12.0.

公开(公告)号：US09458415B2

公开(公告)日：2016-10-04

申请号：US14376978

申请日：2013-01-24

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Shyam Sundar Venkataraman ,  Mingjie Zhong

IPC: C11D7/34 ,  C11D3/34 ,  H01L21/02 ,  C11D3/20 ,  C11D7/26 ,  C11D11/00 ,  C11D3/37

CPC classification number: C11D3/3427 ,  C11D1/722 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C═S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.

Abstract translation: 后化学机械抛光（CMP后）清洁组合物，其包含：（A）至少一种包含至少一种硫醇（-SH），硫醚（-SR1）或硫代羰基（> C = S））的化合物，其中R1 （B）至少一种含有至少三个羟基（-OH）基团并且不包含任何羧酸（-COOH）或羧酸酯（-COO-）基团的糖醇和（B） C）水性介质。

公开(公告)号：US20150018261A1

公开(公告)日：2015-01-15

申请号：US14376978

申请日：2013-01-24

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Shyam Sundar Venkataraman ,  Mingjie Zhong

IPC: C11D3/34 ,  C11D11/00 ,  C11D3/20

CPC classification number: C11D3/3427 ,  C11D1/722 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C═S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.

Abstract translation: 后化学机械抛光（CMP后）清洁组合物，其包含：（A）至少一种包含至少一种硫醇（-SH），硫醚（-SR1）或硫代羰基（> C = S））的化合物，其中R1 （B）至少一种含有至少三个羟基（-OH）基团并且不包含任何羧酸（-COOH）或羧酸酯（-COO-）基团的糖醇和（B） C）水性介质。