公开(公告)号：US20150192854A1

公开(公告)日：2015-07-09

申请号：US14413252

申请日：2013-07-12

Applicant: BASF SE

Inventor： Andreas Klipp ,  Andrei Honciuc ,  Sabrina Montero Pancera ,  Zoltan Baan

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/32 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322

Abstract: A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.

Abstract translation: 提供一种包含用于显影应用于半导体衬底的光致抗蚀剂的季铵化合物的组合物。 还提供了一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法。 可以通过使用改进的组合物防止光致抗蚀剂的溶胀来避免图案塌陷。