公开(公告)号：US11505865B2

公开(公告)日：2022-11-22

申请号：US17259666

申请日：2019-07-04

Applicant: BASF SE

Inventor： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  David Scheschkewitz ,  Kinga Izabela Leszczynska

IPC: C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US11319332B2

公开(公告)日：2022-05-03

申请号：US16954341

申请日：2018-09-17

Applicant: BASF SE ,  WAYNE STATE UNIVERSITY

Inventor： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC: C07F5/06 ,  C23C16/12 ,  C23C16/08 ,  C23C16/20 ,  C23C16/455

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US12297534B2

公开(公告)日：2025-05-13

申请号：US17778429

申请日：2020-11-16

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena Klenk ,  Alexander Georg Hufnagel ,  Hagen Wilmer ,  Daniel Löffler ,  Sabine Weiguny ,  Kerstin Schierle-Arndt ,  Charles Hartger Winter ,  Nilanka Weerathunga Sirikkathuge

IPC: C23C16/455 ,  C23C16/18

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R′ or NR′2, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210079520A1

公开(公告)日：2021-03-18

申请号：US16954341

申请日：2018-09-17

Applicant: BASF SE ,  WAYNE STATE UNIVERSITY

Inventor： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC: C23C16/20 ,  C23C16/12 ,  C23C16/455 ,  C07F5/06

Abstract: Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210079025A1

公开(公告)日：2021-03-18

申请号：US16954371

申请日：2018-11-09

Applicant: BASF SE ,  Wayne State University

Inventor： Lukas Mayr ,  David Dominique Schweinfurth ,  Daniel Waldmann ,  Charles Hartger Winter ,  Kyle Blakeney ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC: C07F5/06 ,  C23C16/455 ,  C23C16/08 ,  C23C16/20

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

公开(公告)号：US11655262B2

公开(公告)日：2023-05-23

申请号：US17710178

申请日：2022-03-31

Applicant: BASF SE ,  Wayne State University

Inventor： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC: C07F5/06 ,  C23C16/08 ,  C23C16/20 ,  C23C16/455 ,  C23C16/12

CPC classification number: C07F5/069 ,  C07F5/067 ,  C23C16/08 ,  C23C16/12 ,  C23C16/20 ,  C23C16/45534 ,  C23C16/45553

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state




where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,

E is NR or O,

n is 0, 1 or 2, m is 0, 1 or 2, and

R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US11505562B2

公开(公告)日：2022-11-22

申请号：US16954371

申请日：2018-11-09

Applicant: BASF SE ,  Wayne State University

Inventor： Lukas Mayr ,  David Dominique Schweinfurth ,  Daniel Waldmann ,  Charles Hartger Winter ,  Kyle Blakeney ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC: C23C16/20 ,  C07F5/06 ,  C23C16/08 ,  C23C16/455 ,  C23C16/12

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

公开(公告)号：US20220220131A1

公开(公告)日：2022-07-14

申请号：US17710178

申请日：2022-03-31

Applicant: BASF SE ,  Wayne State University

Inventor： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC: C07F5/06 ,  C23C16/08 ,  C23C16/20 ,  C23C16/455 ,  C23C16/12

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.