公开(公告)号：US11319332B2

公开(公告)日：2022-05-03

申请号：US16954341

申请日：2018-09-17

申请人： BASF SE ,  WAYNE STATE UNIVERSITY

发明人： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC分类号： C07F5/06 ,  C23C16/12 ,  C23C16/08 ,  C23C16/20 ,  C23C16/455

摘要： A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US11377454B2

公开(公告)日：2022-07-05

申请号：US17046208

申请日：2019-04-10

申请人： BASF SE ,  Wayne State University

发明人： Charles Hartger Winter ,  Kyle Blakeney ,  Lukas Mayr ,  David Dominique Schweinfurth ,  Sabine Weiguny ,  Daniel Waldmann

IPC分类号： C07F5/06 ,  C23C16/30 ,  C23C16/455

摘要： The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US11505562B2

公开(公告)日：2022-11-22

申请号：US16954371

申请日：2018-11-09

申请人： BASF SE ,  Wayne State University

发明人： Lukas Mayr ,  David Dominique Schweinfurth ,  Daniel Waldmann ,  Charles Hartger Winter ,  Kyle Blakeney ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC分类号： C23C16/20 ,  C07F5/06 ,  C23C16/08 ,  C23C16/455 ,  C23C16/12

摘要： Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

公开(公告)号：US20220220131A1

公开(公告)日：2022-07-14

申请号：US17710178

申请日：2022-03-31

申请人： BASF SE ,  Wayne State University

发明人： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC分类号： C07F5/06 ,  C23C16/08 ,  C23C16/20 ,  C23C16/455 ,  C23C16/12

摘要： A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210079520A1

公开(公告)日：2021-03-18

申请号：US16954341

申请日：2018-09-17

申请人： BASF SE ,  WAYNE STATE UNIVERSITY

发明人： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Charles Hartger Winter ,  Kyle Blakeney ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC分类号： C23C16/20 ,  C23C16/12 ,  C23C16/455 ,  C07F5/06

摘要： Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210079025A1

公开(公告)日：2021-03-18

申请号：US16954371

申请日：2018-11-09

申请人： BASF SE ,  Wayne State University

发明人： Lukas Mayr ,  David Dominique Schweinfurth ,  Daniel Waldmann ,  Charles Hartger Winter ,  Kyle Blakeney ,  Sinja Verena Klenk ,  Sabine Weiguny ,  Nilanka Weerathunga Sirikkathuge ,  Tharindu Malawara Arachchige Nimanthaka Karunaratne

IPC分类号： C07F5/06 ,  C23C16/455 ,  C23C16/08 ,  C23C16/20

摘要： Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

公开(公告)号：US20210024549A1

公开(公告)日：2021-01-28

申请号：US17046208

申请日：2019-04-10

申请人： BASF SE ,  Wayne State University

发明人： Charles Hartger Winter ,  Kyle Blakeney ,  Lukas Mayr ,  David Dominique Schweinfurth ,  Sabine Weiguny ,  Daniel Waldmann

IPC分类号： C07F5/06 ,  C23C16/30 ,  C23C16/455

摘要： The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US11505865B2

公开(公告)日：2022-11-22

申请号：US17259666

申请日：2019-07-04

申请人： BASF SE

发明人： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  David Scheschkewitz ,  Kinga Izabela Leszczynska

IPC分类号： C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US11149349B2

公开(公告)日：2021-10-19

申请号：US16338915

申请日：2017-10-18

申请人： BASF SE

发明人： Maraike Ahlf ,  David Dominique Schweinfurth ,  Lukas Mayr ,  Kinga Izabela Leszczynska ,  David Scheschkewitz

IPC分类号： C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40

摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.