公开(公告)号：US20250109332A1

公开(公告)日：2025-04-03

申请号：US18730148

申请日：2023-02-13

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Chih Hui LO ,  Andreas KLIPP ,  Mei Chin SHEN ,  Sven HILDEBRANDT

IPC: C09K13/00 ,  H01L21/306

Abstract: Disclosed herein is a composition for selectively etching a silicon germanium (SiGe) layer in the presence of a silicon layer, the composition including: (a) 1 to 10% by weight of an oxidizing agent; (b) 1 to 14% by weight of an etchant comprising a source of fluoride ions; (c) 0.001 to 3% by weight of a selectivity enhancer of formula S1 (d) 0.001 to 3% by weight of an additional selectivity enhancer of formula S31 and (e) water.

公开(公告)号：US20250115809A1

公开(公告)日：2025-04-10

申请号：US18730007

申请日：2023-02-13

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Sven HILDEBRANDT ,  Andreas KLIPP ,  Chih Hui LO ,  Mei Chin SHEN

IPC: C09K13/08 ,  H01L21/306

Abstract: Disclosed herein is a composition for selectively etching a first silicon germanium layer having a first germanium content in the presence of a silicon layer or a second silicon germanium layer having a second germanium content, where the first germanium content is higher than the second germanium content, the composition including: (a) from 0.1 to 10% by weight of an oxidizing agent; (b) from 1 to 20% by weight of an etchant including a source of fluoride ions; (c) from 0.001 to 3% by weight of a selectivity enhancer of formula Si (d) from 0.001 to 3% by weight of an additional selectivity enhancer of formula S41 or derivatives thereof obtained by homocondensation of the compounds of formula S41 or by co-condensation of the compounds of formula S41 with silanes of formula S42 in a weight ratio of 0.1 or more and (e) water.

公开(公告)号：US20240282584A1

公开(公告)日：2024-08-22

申请号：US18566245

申请日：2022-06-28

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Sven HILDEBRANDT ,  Andreas KLIPP

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: Described herein is a method of using a composition for selectively etching a silicon layer in the presence of a layer including a silicon germanium alloy, the composition including: (a) 4 to 15% by weight of an amine of formula (E1), and (b) water, where XE1, XE2, and XE3 are independently selected from a chemical bond and C1-C6 alkanediyl; YE is selected from N, CRE1, and P; RE1 is selected from H and C1-C6 alkyl.