公开(公告)号：US20250006546A1

公开(公告)日：2025-01-02

申请号：US18705364

申请日：2022-10-21

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Yancheng LU

IPC: H01L21/687

Abstract: A process chamber in a semiconductor process device includes a cavity and a base disposed in the cavity. The base includes a base body and a support column fixedly disposed at the bottom of the base body. An interior of the support column includes a receiving hole that penetrates the support column in an axial direction of the support column. A fixed through-hole is formed at the bottom of the cavity. A bottom end of the support column is fixedly arranged in the fixed through-hole. The receiving hole is connected to the outside of the process chamber through the fixed through-hole. The fixed through-hole includes a positioning groove formed on the bottom wall of the cavity and a connection hole penetrating from the bottom of the positioning groove to an outer surface of the cavity.

公开(公告)号：US20230402265A1

公开(公告)日：2023-12-14

申请号：US18253423

申请日：2021-11-17

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Yancheng LU ,  Gang WEI ,  Xingfei MAO

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20207 ,  H01J2237/2005

Abstract: The present disclosure provides a process chamber and a semiconductor process apparatus. The process chamber is applied in the semiconductor process apparatus and includes a chamber body, a base, and a chuck assembly. The reaction chamber is formed in the chamber body. The base is located in the reaction chamber. The chuck assembly is connected to the base and configured to carry a wafer. The base includes a base body and a plurality of cantilevers. The plurality of cantilevers are arranged evenly along the circumference of the base body. Each cantilever is connected to the inner wall of the chamber body and the outer wall of the base body. The chamber body, the base body, and the cantilever have an integral structure and are made of a material having the electrical conductivity and the thermal conductivity.