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公开(公告)号:US3573088A
公开(公告)日:1971-03-30
申请号:US3573088D
申请日:1967-07-27
发明人: MACCHESNEY JOHN B , POTTER JOHN F
CPC分类号: C04B41/009 , C01G31/02 , C01P2006/40 , C04B41/5025 , C04B41/87 , H01C17/14 , C04B41/4519 , C04B41/455 , C04B35/10
摘要: VANADIUM PENTOXIDE CAN BE ANNEALED TO STABLE VANADIUM DIOXIDE AT TEMPERATURES FROM 400 TO 1200*C. UNDER AN ATOMSPHERE HAVING AN OXYGEN PARTIAL PRESSURE FROM AN ATMOSPHERE HAVING AN OXYGEN PARTIAL PRESSURE FROM 10-4 TO 10-28 ATMOSPHERES. THIS TECHNIQUE IS APPLICABLE ON VANDAIUM PENTOXIDE FILMS PRODUCED BY EVAPORATING VANADYL TRICHLORIDE INTO CARBON DIOXIDE IN THE PRESENCE OF A SUBSTRATE, OR ON FILMS PRODUCED BY THE PHYSICAL APPLICATION OF ALREADY FORMED VANADIUM PENTOXIDE ONTO CERAMIC SUBSTRATES.
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公开(公告)号:US3292062A
公开(公告)日:1966-12-13
申请号:US37162864
申请日:1964-06-01
IPC分类号: C04B35/468 , H01G4/12
CPC分类号: H01G4/1227 , C04B35/4682
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