公开(公告)号：US3877052A

公开(公告)日：1975-04-08

申请号：US42778573

申请日：1973-12-26

Applicant: BELL TELEPHONE LABOR INC

Inventor： DIXON RICHARD WAYNE ,  JOYCE WILLIAM BAXTER ,  RODE DANIEL LEON

IPC: G02B6/42 ,  H01L33/00 ,  H01L33/46 ,  H05B33/00

CPC classification number: H01L33/46 ,  G02B6/4204 ,  H01L33/00 ,  H01L33/385

Abstract: A semiconductor light-emitting diode (LED), which is substantially transparent to its own generated radiation, is coated with a reflecting layer having an exit aperture for transmission of optical radiation, for example, to an optical fiber. The reflecting layer includes a layer of dielectric in contact with the semiconductor, the dielectric layer itself being coated with an optically reflecting metal layer. The dielectric layer is made sufficiently thick to prevent the evanescent waves (of the totally internally reflected light in the semiconductor) from contacting the metal, thereby affording very close to 100 percent optical reflection of the optical rays in the semiconductor which are incident on the dielectric at greater than the critical angle. In addition, a significant portion of the semiconductor-dielectric interface is rough, thereby scattering (randomizing) the totally internally reflected rays in the semiconductor, which rays otherwise would have no chance of being accepted into the optical fiber. Thus, the overall coupling efficiency of optical radiation from the diode to the optical fiber is enhanced.

公开(公告)号：US3896473A

公开(公告)日：1975-07-22

申请号：US42152173

申请日：1973-12-04

Applicant: BELL TELEPHONE LABOR INC

Inventor： DILORENZO JAMES VINCENT ,  NIEHAUS WILLIAM CHARLES ,  RODE DANIEL LEON

IPC: H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L29/864 ,  H01L1/12 ,  H01L1/18

CPC classification number: H01L29/864 ,  H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Gallium arsenide power dissipating devices are described, which comprise an array of mesas formed on a plated heat sink in order to reduce thermal effects. The array is connected in parallel with beam leads to permit thermocompression bonding to only one of the mesas and thus reduce the number of bonding operations. Bonding stresses to the device may be eliminated by rendering one of the mesas inactive.

公开(公告)号：US3890215A

公开(公告)日：1975-06-17

申请号：US44066474

申请日：1974-02-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： DILORENZO JAMES VINCENT ,  NIEHAUS WILLIAM CHARLES ,  RODE DANIEL LEON ,  SCHWARTZ BERTRAM

IPC: H01L21/3063 ,  H01L21/316 ,  H01L29/00 ,  B23P1/00 ,  H01L7/00

CPC classification number: H01L21/31679 ,  H01L21/02241 ,  H01L21/02258 ,  H01L21/3063 ,  H01L21/30635 ,  H01L29/00 ,  Y10S438/977

Abstract: A method for precisely tailoring the thickness of a layer of semiconductor material in a structure comprising regions of varying doping concentrations in order to achieve desired uniform electrical properties. The method involves, generally, electrolytically thinning the layer to remove the semiconductor material until a desired field distribution in the structure is reached. In one embodiment, an FET with an epitaxial layer on a semi-insulating substrate is manufactured by successively oxidizing the epitaxial layer and dissolving the oxide until the depletion region resulting from the applied potential extends into the semi-insulating substrate and oxide growth stops. This results in a uniform pinch-off condition along the layer regardless of the original non-uniformity in the epitaxial layer. In a further embodiment, the epitaxial layer in an IMPATT structure is thinned by successive oxidation and dissolution until the voltage dropped across the semiconductor is equal to the applied potential and again oxide growth stops. This procedure results in a desired uniform breakdown voltage for the wafer.

Abstract translation: 一种用于在包括改变掺杂浓度的区域的结构中精确地定制半导体材料层的厚度的方法，以便实现期望的均匀电性能。 通常，该方法通常电解稀薄该层以去除半导体材料，直到达到结构中的期望的场分布。 在一个实施例中，在半绝缘衬底上具有外延层的FET通过连续地氧化外延层并溶解氧化物来制造，直到由所施加的电势产生的耗尽区延伸到半绝缘衬底中并且氧化物生长停止。 这导致沿着该层的均匀夹断条件，而不管外延层中的原始不均匀性如何。 在另一个实施方案中，通过连续的氧化和溶解使IMPATT结构中的外延层变薄，直到跨过半导体的电压下降等于所施加的电势，并且再次氧化物生长停止。 该过程导致晶片所需的均匀击穿电压。