公开(公告)号：US20210384031A1

公开(公告)日：2021-12-09

申请号：US17377114

申请日：2021-07-15

申请人： BGI SHENZHEN

发明人： Shifeng Li ,  Tengyue Li ,  Yuan Li ,  Zhaohui Wang ,  Xueqin Jiang ,  Jiacheng Chen ,  Aoli Wang ,  Fuxing Huang ,  Xiaogang Song ,  Lingling Peng ,  Handong Li ,  Wenwei Zhang

IPC分类号： H01L21/02 ,  H01L21/78

摘要： Provided are a chip matrix, a sequencing chip, and a manufacturing method thereof. The chip matrix includes: a wafer layer (111), the wafer layer (111) having cutting lines that are evenly distributed thereon; a first silicon oxide layer (112), the first silicon oxide layer (112) being made of silicon oxide and formed on an upper surface of the wafer layer (111); a transition metal oxide layer (113), the transition metal oxide layer (113) being made of transition metal oxide and formed on an upper surface of the first silicon oxide layer (112). The chip matrix has characteristics such as resistances against high temperature, high humidity and other harsh environments. Meanwhile, by changing pH, surfactant and other components of a solution containing sequences to be sequenced, a surface functional region of the chip matrix can specifically adsorb a sequence to be sequenced.