公开(公告)号：US20170040460A1

公开(公告)日：2017-02-09

申请号：US14908877

申请日：2015-08-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU ,  Longbao XIN

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/7869

Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT. The array substrate comprises a base substrate, an oxide thin film transistor TFT formed on the base substrate, a passivation layer being arranged above the oxide TFT, the passivation layer comprises a first film layer, the first film layer being a silicon oxide film; the passivation further comprises a second film layer formed on the first film layer, the second film layer is an alternate stack of silicon nitride films and silicon oxide films, a base layer of the second film layer close to the first film layer is a silicon nitride film; wherein the thickness of the first film layer is greater than the thickness of the second film layer.

Abstract translation: 本发明公开了阵列基板及其制备方法，显示面板和显示装置，以解决由于阈值相对较大的偏移导致的氧化物薄膜的性能可能降低甚至失去工作的问题 由于水，氧和氢基团可以从氧化物TFT上方的钝化层渗透到氧化物TFT的有源层，因此氧化物TFT的电压。 所述阵列基板包括基底基板，形成在所述基底基板上的氧化物薄膜晶体管TFT，所述钝化层设置在所述氧化物TFT的上方，所述钝化层包括第一膜层，所述第一膜层为氧化硅膜; 所述钝化还包括形成在所述第一膜层上的第二膜层，所述第二膜层是氮化硅膜和氧化硅膜的交替堆叠，所述第二膜层的靠近所述第一膜层的基底层是氮化硅 电影; 其中所述第一膜层的厚度大于所述第二膜层的厚度。

公开(公告)号：US20160013319A1

公开(公告)日：2016-01-14

申请号：US14555804

申请日：2014-11-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Longbao XIN

IPC: H01L29/786 ,  H01L29/34

CPC classification number: H01L29/7869 ,  H01L29/34 ,  H01L29/66969 ,  H01L29/78618

Abstract: The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.

Abstract translation: 本发明提供一种薄膜晶体管，阵列基板和显示装置。 薄膜晶体管包括用于还原活性层中的氧空位的导电氧空位降低层。 氧空位降低层设置在有源层与源极和/或有源层和漏极之间。 通过氧空位降低层，活性层的氧空位数大幅度降低，能够提高载流子的透过率，同时降低薄膜晶体管的亚阈值摆动的值。