公开(公告)号：US20140091290A1

公开(公告)日：2014-04-03

申请号：US14039896

申请日：2013-09-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Na LI ,  Joo Hyeon LEE ,  Pil Seok KIM

IPC: H01L51/52 ,  H01L33/52 ,  H01L51/56

CPC classification number: H01L51/5253 ,  C07C249/02 ,  H01L33/52 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/56 ,  H01L2251/308

Abstract: An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a quaternary ammonium salt formed on a top electrode of the light-emitting device, the quaternary ammonium salt having the following structure: wherein the anion X− is Cl−, Br−, I− or NO3−; and the substituents R1, R2, and R3 are the same or different.

Abstract translation: 发光器件的封装结构，其封装工艺和包括所述封装结构的显示器件。 发光装置的封装结构包括：发光装置; 以及形成在发光元件的顶部电极上的季铵盐的保护层，所述季铵盐具有以下结构：其中所述阴离子X是Cl-，Br-，I-或NO 3 - ; 取代基R 1，R 2和R 3相同或不同。

公开(公告)号：US20140070217A1

公开(公告)日：2014-03-13

申请号：US13963372

申请日：2013-08-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng LIU ,  Chunping LONG ,  Pil Seok KIM

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78669 ,  H01L29/66757 ,  H01L29/66765

Abstract: The disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which can manufacture a thin film transistor with lower contents of impurity at a low temperature. The thin film transistor comprises: a substrate, and an active layer disposed on the substrate, the active layer comprising a source region, a drain region and a channel region, wherein the active layer is formed by depositing an inducing metal on an amorphous silicon layer on the substrate by an atomic layer deposition (ALD) method and then conducting heat treatment on the amorphous silicon layer deposited with the inducing metal so that metal induction crystallization and metal induction lateral crystallization take place in the amorphous silicon layer.

Abstract translation: 本发明公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置，其可以在低温下制造具有较低杂质含量的薄膜晶体管。 所述薄膜晶体管包括：衬底和设置在所述衬底上的有源层，所述有源层包括源极区，漏极区和沟道区，其中所述有源层通过在非晶硅层上沉积诱导金属而形成 通过原子层沉积（ALD）方法在衬底上，然后对沉积有诱导金属的非晶硅层进行热处理，使得金属诱导结晶和金属诱导横向结晶发生在非晶硅层中。