DISPLAY MODULE AND DISPLAY APPARATUS HAVING LIGHT EMITTING DEVICE

    公开(公告)号:US20240355791A1

    公开(公告)日:2024-10-24

    申请号:US18635197

    申请日:2024-04-15

    摘要: A display module according to an embodiment includes: a circuit board; a light emitting device disposed on the circuit board; and a molding layer covering the light emitting device, the light emitting device, including: a first LED stack generating light of a first wavelength; a second LED stack disposed on the first LED stack and generating light of a second wavelength; and a third LED stack disposed on the second LED stack and generating light of a third wavelength, in which each of the first, second, and third LED stacks includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and polarities of the first LED stack and the third LED stack disposed over and under the second LED stack are asymmetric with respect to the second LED stack.

    Method of manufacturing light-emitting device and light-emitting device

    公开(公告)号:US12125939B2

    公开(公告)日:2024-10-22

    申请号:US17078839

    申请日:2020-10-23

    发明人: Hidetoshi Tanaka

    IPC分类号: H01L33/00 H01L33/50 H01L33/52

    摘要: A method of manufacturing a light-emitting device includes providing a structure body including a silicon substrate having a first portion, a second portion, and a third portion between the first portion and the second portion, and a first semiconductor layered body including a first light-emitting layer, the first semiconductor layered body being disposed on or above the silicon substrate. The method includes forming a first resin layer covering a lateral side of the silicon substrate and a lateral side of the first semiconductor layered body. The method includes a removal step of removing the first portion to expose a first surface of the first semiconductor layered body, removing the second portion to expose a second surface of the first semiconductor layered body, and leaving the third portion. The method includes forming a first wavelength conversion member on or above the first surface exposed by the removal of the first portion.

    MICRO LIGHT-EMITTING DIODE DEVICE
    4.
    发明公开

    公开(公告)号:US20240313155A1

    公开(公告)日:2024-09-19

    申请号:US18182393

    申请日:2023-03-13

    摘要: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped InxAl(1-x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN layer. x is a positive number smaller than 0.5. The transparent top electrode covers and is in contact with the n-doped InxAl(1-x)N layer. A refractive index of the n-doped InxAl(1-x)N layer is smaller than a refractive index of the n-type GaN layer. A sum of the thicknesses of the n-type GaN layer and the n-doped InxAl(1-x)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

    MICRO LIGHT-EMITTING DIODE DEVICE
    5.
    发明公开

    公开(公告)号:US20240313154A1

    公开(公告)日:2024-09-19

    申请号:US18182390

    申请日:2023-03-13

    摘要: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, a first n-type III-nitride layer above the p-type III-nitride layer, a second n-type III-nitride layer above the first n-type III-nitride layer, and an active layer between the p-type and first n-type III-nitride layers. The second n-type III-nitride layer contains aluminum and has top and bottom surfaces. A refractive index of the second n-type III-nitride layer is smaller than a refractive index of the first n-type III-nitride layer and varies in a monotonically non-decreasing manner from the top surface. The refractive index of the second n-type III-nitride layer is larger at the bottom surface than at the top surface. The cathode transparent electrode is in contact with the top surface.

    FLEXIBLE DISPLAY PANEL AND SLIDING AND ROLLING DISPLAY APPARATUS

    公开(公告)号:US20240258289A1

    公开(公告)日:2024-08-01

    申请号:US17927609

    申请日:2021-11-02

    发明人: Hong ZHU Lu LIU

    摘要: A flexible display panel has a display area, a bezel area disposed around the display area and a sliding and rolling connection area connected to a first border of the bezel area away from the display area. The flexible display panel includes a base substrate covering at least the display area and the bezel area and one or more inorganic insulating layers located on a side of the base substrate. A total thickness of a portion of the one or more inorganic insulating layers located in the sliding and rolling connection area is less than a total thickness of a portion of the one or more inorganic insulating layers located in the display area.