Mask, display substrate and display device

    公开(公告)号:US11054737B2

    公开(公告)日:2021-07-06

    申请号:US16106155

    申请日:2018-08-21

    IPC分类号: G03F1/44 G03F1/38 G03F1/58

    摘要: Disclosed are a mask, a display substrate and a display device. The mask comprises a substrate, a first exposure structure, a second exposure structure located at one side of the substrate and disposed opposite to each other, the first exposure structure comprises a first light transmission film layer and a first light shielding film layer, an orthographic projection of the first light shielding film layer falls within an orthographic projection of the first light transmission film layer on the substrate; the second exposure structure comprises a second light transmission film layer and a second light shielding film layer, an orthographic projection of the second light shielding film layer falls within an orthographic projection of the second light transmission film layer on the substrate; a side edge of the first exposure structure has a first zigzag structure, and a side edge of the second exposure structure has a second zigzag structure.

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND DISPLAY DEVICE

    公开(公告)号:US20200381523A1

    公开(公告)日:2020-12-03

    申请号:US16497658

    申请日:2019-04-12

    摘要: Embodiments of the present disclosure disclose a thin film transistor, a method for manufacturing a thin film transistor, an array substrate, and a display device. The thin film transistor includes a source electrode and a drain electrode, each of the source electrode and the drain electrode including a metal substrate and a conductive layer covering the metal substrate. An adhesion between the conductive layer and a photoresist material is larger than an adhesion between the metal substrate and the photoresist material. The metal substrate and the conductive layer are both formed on a base substrate, an orthographic projection of the conductive layer on the base substrate covers an orthographic projection of the metal substrate on the base substrate, and. an area of the orthographic projection of the conductive layer on the base substrate is larger than an area of the orthographic projection of the metal substrate on the base substrate.

    Phase shift mask and electronic component manufacturing method

    公开(公告)号:US11385537B2

    公开(公告)日:2022-07-12

    申请号:US16343756

    申请日:2018-10-26

    摘要: A phase shift mask includes a transparent substrate and light-shielding portions. The light-shielding portions include a first light-shielding portion, and over one side of it, a first compensating light-shielding portion, which has a first distance to the first light-shielding portion and a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask. The light-shielding portions can further include a second compensating light-shielding portion, having a second distance to another side of the first light-shielding portion and a second width smaller than the resolution of the exposing machine. The first distance and the second distance respectively allow the first and the second compensating light-shielding portion to reduce an exposure at a region corresponding to two sides of the first light-shielding portion during the exposure process. A method manufacturing an electronic component utilizing the phase shift mask is also provided.