公开(公告)号：US09910356B2

公开(公告)日：2018-03-06

申请号：US14894699

申请日：2015-04-27

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Lei Zhang ,  Zhuyi Luo ,  Xiangming Meng ,  Jinho Youn ,  Jianqiang Guo ,  Honglin Liao

IPC分类号： G03C5/04 ,  G03F7/20 ,  G03F7/00 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40

CPC分类号： G03F7/2022 ,  G03F7/0007 ,  G03F7/16 ,  G03F7/2008 ,  G03F7/203 ,  G03F7/32 ,  G03F7/40

摘要： A method of patterning a thin film is provided. The method includes coating a thin film layer and photoresist on a surface of a substrate; forming a first partially cured zone by performing a first exposing process of the photoresist with a mask, wherein exposing energy applied to the photoresist of the first partially cured zone is less than a photosensitive threshold of the photoresist; forming a cured zone on the first partially cured zone by performing a second exposing process of the photoresist with the mask, wherein a width of the cured zone is less than a width of the first partially cured zone, and exposing energy applied to the photoresist of the cured zone is equal to or greater than the photosensitive threshold of the photoresist; developing the photoresist; etching the thin film layer that is not covered by the photoresist; and removing the photoresist of the cured zone.