EXPOSURE APPARATUS
    2.
    发明公开
    EXPOSURE APPARATUS 审中-公开

    公开(公告)号:US20230367230A1

    公开(公告)日:2023-11-16

    申请号:US18361066

    申请日:2023-07-28

    CPC classification number: G03F7/70491 G03F7/70116 G03F7/70625 G03F7/2008

    Abstract: An exposure apparatus includes: light source that emits exposure light; exposure pattern forming apparatus including a plurality of exposure elements and disposed on an optical path of at least part of exposure light; and control unit electrically connected to exposure pattern forming apparatus, in which control unit controls whether workpiece is irradiated with exposure light via each of exposure elements by switching each of exposure elements to a first or second state, and integrates exposure amount in predetermined region of scheduled exposure region by sequentially irradiating predetermined region with light of part of exposure light via a first exposure element in first state among plurality of exposure elements and light of part of exposure light via second exposure element in the first state different from the first exposure element among the plurality of exposure elements in accordance with a relative movement of the workpiece and the exposure pattern forming apparatus.

    SYSTEMS AND METHODS USING MASK PATTERN MEASUREMENTS PERFORMED WITH COMPENSATED LIGHT SIGNALS

    公开(公告)号:US20190235387A1

    公开(公告)日:2019-08-01

    申请号:US16114880

    申请日:2018-08-28

    CPC classification number: G03F7/2004 G03F1/22 G03F7/2008 G03F7/70491

    Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

    Method of manufacturing a structure on a substrate

    公开(公告)号:US09983480B2

    公开(公告)日:2018-05-29

    申请号:US15270422

    申请日:2016-09-20

    Inventor: Daisuke Yajima

    Abstract: A method includes dividing a single beam emitted from a coherent light source into at least two branch beams, and causing the branch beams to cross each other at a predetermined interference angle thereby generating interference pattern. The method also includes irradiating a target surface of a substrate with the interference pattern. The method also includes dividing the target surface of the substrate into a plurality of predetermined shapes, and repeating a first substep of irradiating each predetermined shape with every shot of the interference pattern, and a second substep of conveying the substrate in a stepwise manner such that the predetermined shapes overlap each other in the stepwise manner. The method also includes causing a line-to-line pitch of the interference fringes in one of the predetermined shapes to align with the line-to-line pitch of the interference fringes in a next predetermined shape upon repeating the first and second substeps.

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