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公开(公告)号：US20210288283A1
公开(公告)日：2021-09-16
申请号：US17260018
申请日：2020-05-27
发明人： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Ning LIU , Leilei CHENG , Junlin PENG , Yingbin HU , Liusong NI
摘要： A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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2.发明申请公开(公告)号：US20190386144A1
公开(公告)日：2019-12-19
申请号：US16554657
申请日：2019-08-29
发明人： Yuankui DING , Ce ZHAO , Guangcai YUAN , Yingbin HU , Leilei CHENG , Jun CHENG , Bin ZHOU
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
摘要： A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
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公开(公告)号：US20170207402A1
公开(公告)日：2017-07-20
申请号：US15201790
申请日：2016-07-05
发明人： Leilei CHENG , Yuankui DING , Dongfang WANG , Ce ZHAO
CPC分类号： H01L51/0097 , H01L27/3244 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.
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4.发明申请公开(公告)号：US20210296368A1
公开(公告)日：2021-09-23
申请号：US17264827
申请日：2020-06-15
发明人： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Ning LIU , Yingbin HU , Junlin PENG , Liusong NI
IPC分类号： H01L27/12
摘要： Provided are a display substrate and a manufacturing method therefor, and a display panel and a display apparatus. The gate insulation layer included in the display substrate comprises a first branch portion located between the gate electrode and the active layer, and a second branch portion located below an overlapping region of the first routing and the second routing; a part, extending out of the gate electrode, of the first branch portion has a first width value; at the overlapping region between the second routing and the first routing, a part, extending out of the first routing, of the second branch portion has a second width value; and the first width value is greater than the second width value.
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5.发明申请公开(公告)号：US20210265510A1
公开(公告)日：2021-08-26
申请号：US17254851
申请日：2020-04-08
发明人： Yingbin HU , Ce ZHAO , Yuankui DING , Wei SONG , Liusong NI , Xuechao SUN , Chaowei HAO , Liangchen YAN
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02 , H01L29/66
摘要： The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.
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公开(公告)号：US20210257428A1
公开(公告)日：2021-08-19
申请号：US16959114
申请日：2020-02-26
发明人： Wei SONG , Ce ZHAO , Yuankui DING , Heekyu KIM , Ming WANG , Ning LIU , Yingbin HU
摘要： The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.
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公开(公告)号：US20200273995A1
公开(公告)日：2020-08-27
申请号：US16706160
申请日：2019-12-06
发明人： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Jun LIU , Yingbin HU , Wei LI , Liusong NI
IPC分类号： H01L29/786 , H01L27/12
摘要： The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.
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公开(公告)号：US20200168687A1
公开(公告)日：2020-05-28
申请号：US16441422
申请日：2019-06-14
发明人： Yingbin HU , Liangchen YAN , Ce ZHAO , Yuankui DING , Yang ZHANG , Yongchao HUANG , Luke DING , Jun LIU
摘要： A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.
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9.发明申请公开(公告)号：US20190172953A1
公开(公告)日：2019-06-06
申请号：US15992909
申请日：2018-05-30
发明人： Yuankui DING , Ce ZHAO , Guangcai YUAN , Yingbin HU , Leilei CHENG , Jun CHENG , Bin ZHOU
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
摘要： The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
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公开(公告)号：US20220157212A1
公开(公告)日：2022-05-19
申请号：US17435297
申请日：2021-01-06
发明人： Guangyao LI , Yuankui DING , Liusong NI , Jun WANG , Haitao WANG , Dongfang WANG
摘要： The present disclosure provides a method for detecting a display substrate and a device for detecting a display substrate. The method includes: exciting a threshold voltage of a driving transistor in each pixel driving circuit in the display substrate, so that the threshold voltage of the driving transistor with a shifted threshold voltage is further shifted; inputting a detection signal to each pixel driving circuit in the display substrate, where the detection signal is a signal enabling the pixel driving circuit to operate normally; and judging whether the display substrate is normal or not according to the voltage output by each pixel driving circuit.
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