METHOD FOR MANUFACTURING DISPLAY PANEL, DISPLAY PANEL AND TO-BE-CUT DISPLAY PANEL

    公开(公告)号:US20240213278A1

    公开(公告)日:2024-06-27

    申请号:US17913808

    申请日:2021-10-26

    IPC分类号: H01L27/12

    CPC分类号: H01L27/1288 H01L27/124

    摘要: The present disclosure provides a method for manufacturing a display panel, a display panel and a to-be-cut display panel, and relates to the field of display technologies. The method includes: forming a first electrostatic protective circuit and a source and drain conductive pattern on a base substrate; removing the source and drain conductive pattern within the target cutting region; forming a to-be-cut display panel by forming a superstructure on the base substrate; and cutting the to-be-cut display panel in the target cutting region. When manufacturing the internal structure of the display panel, only the source and drain conductive pattern in the target cutting region is removed, while the electrostatic protective circuit in the target cutting region is retained. In this way, the electrostatic protective circuit can always play the function of electrostatic protective during the formation of the internal structure of the display panel, such that the internal structure of the display panel is avoided from being damaged by electrostatic, the manufacturing yield of the display panel improved, the problem of low manufacturing yield of the display panel in the related technology is solved, and the effect of improving the manufacturing yield of the display panel is achieved.

    MANUFACTURING METHOD OF DISPLAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20200312881A1

    公开(公告)日:2020-10-01

    申请号:US15777118

    申请日:2017-09-26

    IPC分类号: H01L27/12

    摘要: A manufacturing method of a display substrate, an array substrate and a display device are provided. The method includes forming a first wire, a first insulation layer, a first and second metal layer, and a photoresist layer; forming a photoresist retained pattern above the first wire; forming a second and first metal layer retained pattern under the photoresist retained pattern; forming a second insulation layer with a thickness less than or equal to a sum of thicknesses of the first and second metal layer; the second insulation layer forming a fracture region at a boundary between a part covering the first insulation layer and another part covering the second metal layer retained pattern; removing the first and second metal layer retained patterns by a wet etch process to expose the first insulation layer; and forming a contact hole exposing the first wire.