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1.发明公开公开(公告)号：US20240237508A1
公开(公告)日：2024-07-11
申请号：US17801723
申请日：2021-09-24
Inventor： Jingwen FENG , Zhuo LI
CPC classification number: H10K85/381 , C09K11/025 , C09K11/0883 , C09K11/703 , C09K11/883 , H10K50/115 , B82Y20/00 , B82Y40/00
Abstract: The present application provides a quantum dot film layer, a quantum dot light emitting device and a manufacturing method therefor to improve the balance of carriers. The quantum dot film layer includes a first quantum dot layer and a second quantum dot layer. The first quantum dot layer includes first quantum dots, and first photosensitive ligands connected with surfaces of the first quantum dots. The second quantum dot layer includes second quantum dots, and second non-photosensitive ligands connected with surfaces of the second quantum dots. The second quantum dots are the same as the first quantum dots.
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2.发明公开公开(公告)号：US20230383178A1
公开(公告)日：2023-11-30
申请号：US18034364
申请日：2020-12-09
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jingwen FENG
IPC: C09K11/02 , C09K11/70 , C09K11/08 , H10K50/115
CPC classification number: C09K11/025 , C09K11/703 , C09K11/0883 , H10K50/115 , B82Y20/00
Abstract: Disclosed are a quantum dot and a preparation method therefor, a quantum dot light-emitting device, and a display apparatus. The quantum dot includes a core structure and a shell structure that surrounds the core structure, wherein the material of the outermost shell in the shell structure includes an electron transport material and a hole transport material.
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3.发明申请公开(公告)号：US20220102664A1
公开(公告)日：2022-03-31
申请号：US17426615
申请日：2021-01-11
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jingwen FENG
Abstract: The present invention provides QLED devices, hole transport materials and producing methods thereof, and display devices. A hole transport material includes a polymer, wherein the polymer is a single nanoparticle including at least a first metal compound and a second metal compound, the first metal compound and the second metal compound are linked via a covalent bond or a Van der Waals force, and valence band energy levels of the first metal compound and the second metal compound are different.
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公开(公告)号：US20250120245A1
公开(公告)日：2025-04-10
申请号：US18028462
申请日：2022-06-21
Inventor： Jingwen FENG , Maocheng JIANG , Yichi ZHANG
IPC: H10K50/115 , B82Y20/00 , C09K11/88 , H10K50/15 , H10K102/00
Abstract: A blue top emitting quantum dot light-emitting device and a display apparatus are disclosed. The blue top emitting quantum dot light-emitting device includes: a cathode and an anode oppositely arranged, a blue quantum dot light-emitting layer between the cathode and the anode, an electron transport layer between the cathode and the blue quantum dot light-emitting layer, and a hole transport layer between the blue quantum dot light-emitting layer and the anode; where: a material of the blue quantum dot light-emitting layer is ZnSe1-x:Tex/ZnSe/ZnS, ZnSe1-x:Tex means that a molar ratio of Se to Te is 1-x:x, and x is 0.03 to 0.07; a thickness of the hole transport layer is 10 nm to 35 nm, a thickness of the electron transport layer is 25 nm to 50 nm, and a sum of thicknesses of the hole transport layer and the electron transport layer is 55 nm to 65 nm.
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公开(公告)号：US20240357855A1
公开(公告)日：2024-10-24
申请号：US18028558
申请日：2022-04-24
Inventor： Jingwen FENG
IPC: H10K50/852 , H10K50/115 , H10K50/818 , H10K50/828
CPC classification number: H10K50/852 , H10K50/115 , H10K50/818 , H10K50/828
Abstract: The present disclosure provides a quantum dot light emitting diode, includes a first electrode, a second electrode and a quantum dot light emitting layer between the first electrode and the second electrode, where one of the first electrode and the second electrode is a reflective electrode, and the other is a transmissive electrode or a transflective electrode; at least one optical adjustment layer is arranged between the first electrode and the second electrode, each optical adjustment layer forms a microcavity structure with the reflective electrode, and light extraction efficiency P of the quantum dot light emitting diode satisfies 25%≤P≤98%. An embodiment of the present disclosure further provides a method of manufacturing a quantum dot light emitting diode and a display panel.
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Patent Agency Ranking
公开(公告)号：US20240298510A1
公开(公告)日：2024-09-05
申请号：US17919286
申请日：2021-11-19
Inventor： Haowei WANG , Zhuo LI , Jingwen FENG
IPC: H10K71/12 , C09K11/06 , H10K50/115 , H10K59/35
CPC classification number: H10K71/12 , C09K11/06 , H10K50/115 , H10K59/35
Abstract: A quantum dot film includes a target color quantum dot film and a residual non-target color quantum dot film, wherein a ligand for the target color quantum dot of the target color quantum dot film is an oil-soluble ligand, and a ligand for the residual non-target color quantum dot of the residual non-target color quantum dot film is selected from any one or more of halogen ions and short-chain organic ligands whose carbon chain length is in a range of 2 to 18 carbons.
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公开(公告)号：US20220006033A1
公开(公告)日：2022-01-06
申请号：US17436035
申请日：2021-02-25
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jingwen FENG
Abstract: The present disclosure provides a quantum dot light-emitting device, a preparing method and a display device. The quantum dot light-emitting device includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode laminated one on another. The quantum dot light-emitting layer includes heterodimer quantum dots, the heterodimer quantum dots include first quantum dots carrying a positive charge and second quantum dots carrying a negative charge, and each first quantum dot and each second quantum dot have a same energy gap and different positions of conduction band and valence band.
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8.发明公开公开(公告)号：US20240237380A1
公开(公告)日：2024-07-11
申请号：US17913474
申请日：2021-09-14
Inventor： Wenhai MEI , Jingwen FENG
IPC: H10K50/115 , H10K59/35 , H10K71/20 , H10K85/10 , H10K50/16
CPC classification number: H10K50/115 , H10K59/35 , H10K71/231 , H10K85/111 , H10K50/16
Abstract: A light-emitting substrate includes a plurality of light-emitting devices including at least one first light-emitting device and at least one second light-emitting device. A first light-emitting device in the at least one first light-emitting device includes a first color light-emitting layer. A second light-emitting device in the at least one second light-emitting device includes another first color light-emitting layer, and a first material layer and a second color light-emitting layer that are sequentially stacked on the another first color light-emitting layer. The first material layer is configured to transport holes transported from the first color light-emitting layer to the second color light-emitting layer, and to block electrons transported from the second color light-emitting layer; or the first material layer is configured to transport electrons transported from the first color light-emitting layer to the second color light-emitting layer, and to block holes transported from the second color light-emitting layer.
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公开(公告)号：US20230380203A1
公开(公告)日：2023-11-23
申请号：US18028335
申请日：2021-01-26
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jingwen FENG
IPC: H10K50/115 , H10K71/10 , C09K11/06
CPC classification number: H10K50/115 , H10K71/10 , C09K11/06 , C09K2211/10 , H10K85/381
Abstract: Provided are a quantum dot light-emitting device, a display apparatus and a manufacturing method The quantum dot light-emitting device includes: a light-emitting layer group of a first and second quantum dot light-emitting layers arranged in a laminated manner, the chain length of a first ligand is greater than that of a second ligand, the difference between two chain lengths is greater than a first preset value; the difference between the number of carriers arriving at the light-emitting layer group from a first electrode layer and the number of carriers arriving at the light-emitting layer group from a second electrode layer is greater than a second preset value; the side of the light-emitting layer group with the largest number of entering carriers is used as a multi-carrier entry side; the first quantum dot light-emitting layer is on the surface of the second quantum dot light-emitting layer facing the multi-carrier entry side.
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10.发明公开公开(公告)号：US20230174859A1
公开(公告)日：2023-06-08
申请号：US17416261
申请日：2020-12-30
Applicant: BOE Technology Group Co., Ltd.
Inventor： Xuyong YANG , Fan CAO , Haiqiao YE , Yang LIU , Jingwen FENG
CPC classification number: C09K11/883 , C09K11/0883 , B82Y20/00
Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.
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