公开(公告)号：US20190280070A1

公开(公告)日：2019-09-12

申请号：US16070656

申请日：2017-12-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L21/266 ,  G09G3/3258 ,  G09G3/3291

Abstract: A light emitting circuit and a driving method thereof, an electronic device, a double-gate thin film transistor and a manufacture method thereof are provided. The light emitting circuit includes a double-gate thin film transistor and a light emitting component, the double-gate thin film transistor includes a first gate electrode, a second gate electrode, a first electrode and a second electrode, and where only both the first gate electrode and the second gate electrode receive turn-on signals simultaneously, the double-gate thin film transistor is turned on to drive the light emitting component.

公开(公告)号：US20210175360A1

公开(公告)日：2021-06-10

申请号：US15779970

申请日：2017-10-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/40

Abstract: The present disclosure relates to a TFT and a method for manufacturing the TFT. The method includes forming an active layer; forming a gate electrode insulating layer on the active layer; forming a gate electrode on the gate electrode insulating layer; forming an interlayer insulating layer on the gate electrode to cover the gate electrode and the active layer, so that an interface between the interlayer insulating layer and the active layer possesses a donor-like defect state; forming a via hole in the interlayer insulating layer so that the active layer is exposed; and forming a source electrode and a drain electrode on the interlayer insulating layer, so that the source electrode and the drain electrode are electrically coupled to the active layer through the via hole, respectively.

公开(公告)号：US20200083473A1

公开(公告)日：2020-03-12

申请号：US16398165

申请日：2019-04-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU

IPC: H01L51/52 ,  G09G3/3225 ,  H01L27/32

Abstract: An OLED display substrate and a method of preparing the same, and an OLED display device are provided, the OLED display substrate including: a base substrate; an OLED device layer above the base substrate; and a photosensitive structure layer between the base substrate and the OLED device layer; the photosensitive structure layer is configured to convert an optical energy of light rays incident on the OLED display substrate into an electric energy, and in turn to provide the OLED device layer with the electric energy to drive the OLED device layer to emit light rays, and to use a luminance displayed by the the OLED device layer of the OLED display substrate to indicate an intensity of the light rays which are irradiating onto the OLED display substrate.

公开(公告)号：US20180331129A1

公开(公告)日：2018-11-15

申请号：US15866675

申请日：2018-01-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU

IPC: H01L27/12 ,  H01L49/02 ,  G02F1/1362 ,  H01L27/32

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/3248 ,  H01L27/3265 ,  H01L28/60 ,  H01L28/90

Abstract: A display substrate is disclosed. The display device includes a first electrode, a second electrode, and a vertical storage capacitor in an insulating layer. The vertical storage capacitor includes a first plate and a second plate which are spaced apart. The first plate is connected with the first electrode, the second plate is connected with the second electrode, and the first plate and the second plate are perpendicular with or tilted with respect to the substrate. A method for fabricating the display substrate and a display device are also disclosed.

公开(公告)号：US20250126890A1

公开(公告)日：2025-04-17

申请号：US18688058

申请日：2023-01-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Pengfei GU

IPC: H10D86/40

Abstract: The present disclosure provides a display apparatus, an array substrate, and a thin-film transistor. The thin-film transistor includes: an active layer, including a channel region and two source/drain regions, the two source/drain regions are at two opposite sides of the channel region, the source/drain regions are spaced apart from the channel region, the regions of the active layer between the source/drain regions and the channel region are conductorization regions; the first source/drain electrode portion and the second source/drain electrode portion are correspondingly connected with the two source/drain regions, the second source/drain electrode portion is on a side of the interlayer insulation layer away from the substrate, and an orthographic projection of the second source/drain electrode portion on the active layer overlaps with the conductorization region. The present disclosure is beneficial for the preparation of small-sized thin-film transistors

公开(公告)号：US20250031465A1

公开(公告)日：2025-01-23

申请号：US18034094

申请日：2021-12-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Je HUANG ,  Feifei LI ,  Yuhang LU ,  Rui HUANG ,  Fengjuan LIU

IPC: H01L27/146

Abstract: A photoelectric sensor and a substrate are disclosed. The photoelectric sensor includes a photoelectric conversion layer, a first electrode and a second electrode, wherein the first electrode is arranged on a side of the photoelectric conversion layer, and the second electrode is arranged on a side of the photoelectric conversion layer and is spaced apart from the first electrode; wherein the first electrode and the second electrode are configured to drive the photoelectric conversion layer; and in a direction perpendicular to a surface of the photoelectric conversion layer, the first electrode and the second electrode are overlapped with the photoelectric conversion layer respectively, and the photoelectric conversion layer includes an oxide semiconductor material.

公开(公告)号：US20210143280A1

公开(公告)日：2021-05-13

申请号：US17255787

申请日：2020-04-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Fengjuan LIU

IPC: H01L29/786 ,  H01L29/66

Abstract: The present disclosure provides a TFT. The TFT includes an active layer and a gate insulating layer, the active layer includes a first active sub-layer and a second active sub-layer which are arranged in a stacked manner, the second active sub-layer is between the gate insulating layer and the first active sub-layer, a Fermi potential of the first active sub-layer is larger than a Fermi potential of the second active sub-layer, a maximum thickness of a depletion region in the first active sub-layer is equal to a thickness of the first active sub-layer, and a maximum thickness of a depletion region in the second active sub-layer is equal to a thickness of the second active sub-layer.

公开(公告)号：US20170250378A1

公开(公告)日：2017-08-31

申请号：US15208446

申请日：2016-07-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Fengjuan LIU ,  Hongda SUN

IPC: H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  H01L51/50

CPC classification number: H01L51/56 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5206 ,  H01L2251/303

Abstract: A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode. (FIG. 1)