Touch screen, display device and manufacturing method thereof usable for realizing 3D display

    公开(公告)号:US09996200B2

    公开(公告)日:2018-06-12

    申请号:US14348133

    申请日:2013-06-27

    摘要: Embodiments of the invention relate to a touch screen, a display device and manufacturing method thereof being usable for realizing 3D display. The touch screen comprises: an upper substrate and a lower substrate cell-assembled; and liquid crystal, filled between the upper substrate and the lower substrate, wherein the upper substrate comprises: an upper transparent substrate and a transparent conductive layer disposed on the upper transparent substrate, i.e. on a side of the upper transparent substrate facing the lower substrate; the lower substrate comprises: a lower transparent substrate and a first sensing electrode layer, an insulating layer and a second sensing electrode layer sequentially disposed on the lower transparent substrate, i.e. on a side of the lower transparent substrate facing the upper substrate, wherein the first sensing electrode layer comprises a plurality of first sensing electrodes, the second sensing electrode layer comprises a plurality of second sensing electrodes that cross over the first sensing electrodes, and the insulating layer is configured to insulate the first sensing electrodes and the second sensing electrodes, to thus form touch sensing capacitors.

    Backlight module and display device
    3.
    发明授权
    Backlight module and display device 有权
    背光模块和显示设备

    公开(公告)号:US09146344B1

    公开(公告)日:2015-09-29

    申请号:US14498335

    申请日:2014-09-26

    IPC分类号: H05K5/02 F21V8/00

    CPC分类号: G02B6/0085 G02B6/0055

    摘要: The present invention provides a backlight module and a display device. The backlight module comprises a light source and a backplate comprising a baseplate and a side plate surrounding edges of the baseplate, wherein the light source is provided on the side plate, the baseplate is formed by jointing a plurality of sub-baseplates with different heat conductivities together, and the plurality of sub-baseplates can allow heat generated by the light source to be circulated and led out. In the backlight module provided by the present invention, by jointing a plurality of sub-baseplates with different heat conductivities together to form the baseplate, heat generated by the light source can be circulated and conducted along the sub-baseplates with different heat conductivities, which greatly accelerates heat conduction in the baseplate, may cause the overall temperature of the baseplate to be lowered rapidly and be more uniform, and avoids appearance of wrinkles in film layer with smaller thickness in the backlight module. With the above backlight module, the display device becomes lighter and thinner, and can also ensure good display luminance and display quality.

    摘要翻译: 本发明提供一种背光模块和显示装置。 背光模块包括光源和背板,该背板包括基板和围绕所述基板边缘的侧板,其中所述光源设置在所述侧板上,所述基板通过将多个具有不同热导率的子基板接合而形成 并且多个子基板可以允许由光源产生的热量被循环并引出。 在本发明提供的背光模块中,通过将多个具有不同导热性的子底板连接在一起形成基板,由光源产生的热量可以沿着具有不同热导率的底基板循环传导, 极大地加速了基板的热传导,可能会使基板的整体温度迅速下降并且更加均匀,并且避免背光模块中厚度较薄的薄膜层出现褶皱。 使用上述背光模块,显示装置变得越来越薄,并且还可以确保良好的显示亮度和显示质量。

    THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE
    4.
    发明申请
    THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE 有权
    薄膜晶体管,其制造方法和阵列基板

    公开(公告)号:US20150084037A1

    公开(公告)日:2015-03-26

    申请号:US14348802

    申请日:2013-09-27

    摘要: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode (102) formed on a substrate (101), a gate insulating layer (103) formed on the gate electrode (102) and covering at least a part of the substrate (101), and a semiconductor layer (105′), a source electrode (107a) and a drain electrode (107b) which are formed on the gate insulating layer (103). The material of the semiconductor layer (105′) is an oxide semiconductor; and the material of the source electrode (107a) and drain electrode (107b) is the oxide semiconductor which is doped. The source electrode (107a), the drain electrode (107b) and the semiconductor layer (105′) are disposed in the same layer.

    摘要翻译: 提供薄膜晶体管,其制造方法和阵列基板。 薄膜晶体管包括:形成在基板(101)上的栅电极(102),形成在栅电极(102)上并覆盖基板(101)的至少一部分的栅极绝缘层(103) 形成在栅极绝缘层(103)上的半导体层(105'),源电极(107a)和漏电极(107b)。 半导体层(105')的材料是氧化物半导体; 并且源电极(107a)和漏电极(107b)的材料是掺杂的氧化物半导体。 源电极(107a),漏电极(107b)和半导体层(105')设置在同一层中。

    Method and device for detecting defects in a pressing test of a touch screen

    公开(公告)号:US10222884B2

    公开(公告)日:2019-03-05

    申请号:US15159214

    申请日:2016-05-19

    IPC分类号: G06K9/00 G06F3/041 G06T7/00

    摘要: The present invention provides a method and a device for detecting defects in a pressing test of a touch screen. The method for detecting defects in a pressing test of a touch screen includes: Step S1: acquiring, after each test point of the touch screen is tested, an image of a test region in which the test point is located, when performing the pressing test; Step S2: identifying a quantity of abnormal points in the acquired image; and Step S3: comparing the identified quantity of abnormal points with a quantity of abnormal points allowed in the pressing test, and determining that the touch screen has defects if the identified quantity of abnormal points exceeds the quantity of abnormal points allowed in the pressing test. The above method for detecting defects can check instantly and accurately whether defects arise on the touch screen during the pressing test.

    Thin film transistor, manufacturing method thereof and array substrate
    8.
    发明授权
    Thin film transistor, manufacturing method thereof and array substrate 有权
    薄膜晶体管,其制造方法和阵列基板

    公开(公告)号:US09437742B2

    公开(公告)日:2016-09-06

    申请号:US14348802

    申请日:2013-09-27

    摘要: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode (102) formed on a substrate (101), a gate insulating layer (103) formed on the gate electrode (102) and covering at least a part of the substrate (101), and a semiconductor layer (105′), a source electrode (107a) and a drain electrode (107b) which are formed on the gate insulating layer (103). The material of the semiconductor layer (105′) is an oxide semiconductor; and the material of the source electrode (107a) and drain electrode (107b) is the oxide semiconductor which is doped. The source electrode (107a), the drain electrode (107b) and the semiconductor layer (105′) are disposed in the same layer.

    摘要翻译: 提供薄膜晶体管,其制造方法和阵列基板。 薄膜晶体管包括:形成在基板(101)上的栅电极(102),形成在栅电极(102)上并覆盖基板(101)的至少一部分的栅极绝缘层(103) 形成在栅极绝缘层(103)上的半导体层(105'),源电极(107a)和漏电极(107b)。 半导体层(105')的材料是氧化物半导体; 并且源电极(107a)和漏电极(107b)的材料是掺杂的氧化物半导体。 源电极(107a),漏电极(107b)和半导体层(105')设置在同一层中。