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公开(公告)号：US10605596B2
公开(公告)日：2020-03-31
申请号：US16045187
申请日：2018-07-25
发明人： Cheng Zhou , Zhilong Yuan , Xiaodong Yang , Chunpeng Zhang , Fei Li , Yan Hu , Hongguang Yuan , Chengshih Huang , Guowei Su , Yu Zhang , Zubin Lv
IPC分类号： G01B21/02 , H01L21/02 , G01Q30/02 , G01N23/2251 , G01B11/02 , C30B1/02 , G01B15/00 , C30B29/06
摘要： The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.
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2.发明申请公开(公告)号：US20190086203A1
公开(公告)日：2019-03-21
申请号：US16045187
申请日：2018-07-25
发明人： Cheng Zhou , Zhilong Yuan , Xiaodong Yang , Chunpeng Zhang , Fei Li , Yan Hu , Hongguang Yuan , Chengshih Huang , Guowei Su , Yu Zhang , Zubin Lv
摘要： The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.
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