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公开(公告)号：US10896829B2
公开(公告)日：2021-01-19
申请号：US15981209
申请日：2018-05-16
IPC分类号： H01L21/67 , B23K26/00 , H01L21/02 , B23K26/14 , B23K26/354
摘要： An excimer laser annealing apparatus is provided. The excimer laser annealing apparatus includes: a laser output channel, at least one first intake pipe and at least one second intake pipe, the laser output channel includes two end faces facing to each other and a side face connected with both of the two end faces; the at least one first intake pipe is located on the side face; and the at least one second intake pipe is located on at least one of the two end faces.
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公开(公告)号：US11997886B2
公开(公告)日：2024-05-28
申请号：US17440934
申请日：2021-02-08
IPC分类号： H10K59/124 , G09F9/33 , H01L27/12 , H10K59/12 , H10K59/122 , H10K77/10 , H10K102/00
CPC分类号： H10K59/124 , H10K59/122 , H10K77/111 , H10K2102/311
摘要： The present disclosure provides a display panel and a display apparatus. The display panel includes at least one opening, and further includes: a substrate; a thin film transistor structure layer; a first inorganic passivation layer; an organic planarization layer on a side of the first inorganic passivation layer distal to the thin film transistor structure layer; and a second inorganic passivation layer on a side of the organic planarization layer distal to the first inorganic passivation layer. The second inorganic passivation layer extends toward the first inorganic passivation layer alone a side of the organic planarization layer proximal to the at least one opening and covers an exposed portion of the organic planarization layer on a side of the organic planarization layer proximal to the at least one opening.
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公开(公告)号：US11737342B2
公开(公告)日：2023-08-22
申请号：US17210844
申请日：2021-03-24
发明人： Huaisen Ren , Ke Yang , Tao Gao , Zubin Lv , Peng Hou , Yanqiang Wang , Yongzhan Han
IPC分类号： H10K65/00 , G06V40/13 , H10K59/122 , H10K59/124 , H10K59/125 , H10K59/40 , H10K59/12
CPC分类号： H10K65/00 , G06V40/1318 , H10K59/122 , H10K59/124 , H10K59/125 , H10K59/1201 , H10K59/40
摘要： The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus. The display substrate has a fingerprint identification region. The display substrate includes a base substrate; a display unit on the base substrate and including a display thin film transistor and a light-emitting device, a second electrode of the display thin film transistor being coupled to a first electrode of the light-emitting device; and a fingerprint identification unit at a gap between adjacent display units in the fingerprint identification region and including a fingerprint identification transistor and a photosensitive device, a first electrode of the fingerprint identification transistor being coupled to a second electrode of the photosensitive device. The display substrate further includes a gate insulating layer on a side of an active layer of the display thin film transistor and an active layer of the fingerprint identification transistor distal to the base substrate.
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公开(公告)号：US10605596B2
公开(公告)日：2020-03-31
申请号：US16045187
申请日：2018-07-25
发明人： Cheng Zhou , Zhilong Yuan , Xiaodong Yang , Chunpeng Zhang , Fei Li , Yan Hu , Hongguang Yuan , Chengshih Huang , Guowei Su , Yu Zhang , Zubin Lv
IPC分类号： G01B21/02 , H01L21/02 , G01Q30/02 , G01N23/2251 , G01B11/02 , C30B1/02 , G01B15/00 , C30B29/06
摘要： The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.
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公开(公告)号：US10312655B2
公开(公告)日：2019-06-04
申请号：US15841619
申请日：2017-12-14
发明人： Yin Xie , Zubin Lv , Yu Zhang , Yongzhou Ling , Yayu Wang , Jingshuai Wang , Chenliang Liu , Rujian Li , Kang Luo
摘要： An excimer laser generator and an excimer laser annealing equipment are disclosed to improve the convenience of window replacement, improve the replacement efficiency and reduce the gas waste. The excimer laser generator includes a reflector, an active medium cavity and an output mirror arranged in sequence. The active medium cavity has a first opening facing the reflector and a second opening facing the output mirror. The excimer laser generator further includes two replacement units respectively arranged between the first opening and the reflector, and between the second opening and the output mirror. Each of the replacement units includes a support plate and a driving component. The support plate is provided with a plurality of windows, and the driving component is adapted for driving the support plate so that one of the plurality of windows seals a corresponding opening.
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6.发明申请公开(公告)号：US20190086203A1
公开(公告)日：2019-03-21
申请号：US16045187
申请日：2018-07-25
发明人： Cheng Zhou , Zhilong Yuan , Xiaodong Yang , Chunpeng Zhang , Fei Li , Yan Hu , Hongguang Yuan , Chengshih Huang , Guowei Su , Yu Zhang , Zubin Lv
摘要： The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.
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