摘要:
An integrated circuit is configured for optical communication via an optical polymer stack located on top of the integrated circuit. The optical polymer stack may include one or more electro-optic polymer devices including an electro-optic polymer. The electro-optic polymer may include a host polymer and a second order nonlinear chromomophore, the host polymer and the chromophore both including aryl groups configured to interact with one another to provide enhanced thermal and/or temporal stability.
摘要:
An electro-optic polymer semiconductor integrated circuit includes one or more doped regions configured to drive one or more electrodes, and the electrodes are configured to drive a juxtaposed electro-optic core. The assembly may include a planarization layer disposed at least partially coplanar with the electrodes. The circuit may include an integrated multiplexer, driver configured to receive a signal from the multiplexer, at least one high speed electrode configured to be driven by the driver and modulate light energy passed through a hyperpolarizable poled chromophore regions disposed near the high speed electrode. The circuit may include a calibration storage circuit. The circuit may include, during fabrication, structures to provide voltage to a buried electrode and a shield to prevent damage from the poling field.
摘要:
An electro-optic polymer semiconductor integrated circuit includes one or more doped regions configured to drive one or more electrodes, and the electrodes are configured to drive a juxtaposed electro-optic core. The assembly may include a planarization layer disposed at least partially coplanar with the electrodes. The circuit may include an integrated multiplexer, driver configured to receive a signal from the multiplexer, at least one high speed electrode configured to be driven by the driver and modulate light energy passed through a hyperpolarizable poled chromophore regions disposed near the high speed electrode. The circuit may include a calibration storage circuit. The circuit may include, during fabrication, structures to provide voltage to a buried electrode and a shield to prevent damage from the poling field.
摘要:
According to an embodiment, an electro-optic polymer comprises a host polymer and a guest nonlinear optical chromophore having the structure D-π-A, wherein: D is a donor, π is a π-bridge, and A is an acceptor; a bulky substituent group is covalently attached to at least one of D, π, or A; and the bulky substituent group has at least one non-covalent interaction with part of the host polymer that impedes chromophore depoling.
摘要:
A process that comprises dry etching a trench into a side clad polymer layer using an underlying passive polymer layer as an etch stop, and then back filling the trench with an electro-optic polymer.
摘要:
A process that comprises dry etching a trench into a side clad polymer layer using an underlying passive polymer layer as an etch stop, and then back filling the trench with an electro-optic polymer.
摘要:
A low resistivity hybrid optical cladding may be formed from a sol-gel doped with an inorganic salt such as lithium perchlorate. An electro-optic device may be formed by poling an organic chromophore-loaded modulation layer through at least one layer of the low resistivity hybrid optical cladding.
摘要:
A low index of refraction hybrid optical cladding may be formed from a fluorinated sol-gel. An electro-optic device may include a poled organic chromophore-loaded modulation layer (electro-optic polymer) and at least one adjacent fluorinated hybrid sol-gel cladding layer.
摘要:
A low index of refraction hybrid optical cladding may be formed from a fluorinated sol-gel. An electro-optic device may include a poled organic chromophore-loaded modulation layer (electro-optic polymer) and at least one adjacent fluorinated hybrid sol-gel cladding layer.
摘要:
A low resistivity hybrid organic-inorganic material may include a proportion of charge traps including a trap element indirectly covalently bonded to a donor or acceptor element. The trap element may include tin. The donor or acceptor element may include indium and/or antimony. Bonding includes cross-linking via oxygen bonds and via organic cross-linkers. The material may be formed as a hybrid sol-gel. The material may have optical transmission and refractive index characteristics. The material may be formed as optical cladding proximal to a non-linear optical layer, and may form a portion of a second order nonlinear optical device. The second order nonlinear optical device may include and electro-optic device including an organic chromophore-loaded modulation layer.