Prostate cancer specific internalizing human antibodies
    3.
    发明授权
    Prostate cancer specific internalizing human antibodies 有权
    前列腺癌特异性内化人抗体

    公开(公告)号:US07582736B2

    公开(公告)日:2009-09-01

    申请号:US11972130

    申请日:2008-01-10

    IPC分类号: C12P21/08

    摘要: This invention provides novel prostate cancer specific internalizing human antibodies. The antibodies are useful by themselves to prevent growth and/or proliferation of prostate cancer cells. The antibodies can also be formulated as chimeric molecules to direct an effector (e.g. a cytotoxin, an imaging reagent, a drug, etc.) to a prostate tumor site.

    摘要翻译: 本发明提供了新型前列腺癌特异性内化人抗体。 抗体本身可用于预防前列腺癌细胞的生长和/或增殖。 抗体还可以配制成嵌合分子以将效应物(例如细胞毒素,成像试剂,药物等)引导至前列腺肿瘤部位。

    Prostate cancer specific internalizing human antibodies
    4.
    发明授权
    Prostate cancer specific internalizing human antibodies 有权
    前列腺癌特异性内化人抗体

    公开(公告)号:US07335744B2

    公开(公告)日:2008-02-26

    申请号:US11021438

    申请日:2004-12-21

    IPC分类号: C12P21/08

    摘要: This invention provides novel prostate cancer specific internalizing human antibodies. The antibodies are useful by themselves to prevent growth and/or proliferation of prostate cancer cells. The antibodies can also be formulated as chimeric molecules to direct an effector (e.g. a cytotoxin, an imaging reagent, a drug, etc.) to a prostate tumor site.

    摘要翻译: 本发明提供了新型前列腺癌特异性内化人抗体。 抗体本身可用于预防前列腺癌细胞的生长和/或增殖。 抗体还可以配制成嵌合分子以将效应物(例如细胞毒素,成像试剂,药物等)引导至前列腺肿瘤部位。

    Spinning top toy
    6.
    外观设计

    公开(公告)号:USD963755S1

    公开(公告)日:2022-09-13

    申请号:US29817319

    申请日:2021-11-30

    申请人: Bin Liu

    设计人: Bin Liu

    Plant stand
    7.
    外观设计

    公开(公告)号:USD951671S1

    公开(公告)日:2022-05-17

    申请号:US29787621

    申请日:2021-06-08

    申请人: Bin Liu

    设计人: Bin Liu

    NANOWIRE STRUCTURES FOR SOLAR WATER SPLITTING

    公开(公告)号:US20190024246A1

    公开(公告)日:2019-01-24

    申请号:US14692886

    申请日:2015-04-22

    摘要: This disclosure provides systems, methods, and apparatus related to solar water splitting. In one aspect, a structure includes a plurality of first nanowires, the plurality of first nanowires comprising an n-type semiconductor or a p-type semiconductor. The structure further includes a second nanowire, the second nanowire comprising the n-type semiconductor or the p-type semiconductor, the second nanowire being a different composition than the plurality of first nanowires. The second nanowire includes a first region and a second region, with the first region having a conductive layer disposed thereon, and each of the plurality of first nanowires being disposed on the conductive layer.