Thin film with exchange coupling between magnetic grains of the thin film
    1.
    发明申请
    Thin film with exchange coupling between magnetic grains of the thin film 审中-公开
    薄膜与薄膜的磁性颗粒之间的交换耦合

    公开(公告)号:US20050106422A1

    公开(公告)日:2005-05-19

    申请号:US10717107

    申请日:2003-11-19

    摘要: The invention includes improving or enhancing exchange coupling within a thin film layer. The improvement or enhancement to the exchange coupling occurs between the grains that are deposited to form the thin film. The improvement or enhancement to the exchange coupling between the grains of the thin film results from annealing the thin film at an elevated temperature for a period of time. A thin film structure and/or a magnetic recording layer made in accordance with the invention are disclosed.

    摘要翻译: 本发明包括改善或增强薄膜层内的交换耦合。 在沉积以形成薄膜的晶粒之间发生交换耦合的改进或增强。 对薄膜晶粒之间的交换耦合的改善或增强是由于在高温下将薄膜退火一段时间。 公开了根据本发明制成的薄膜结构和/或磁记录层。

    Thermally isolated granular media for heat assisted magnetic recording
    2.
    发明申请
    Thermally isolated granular media for heat assisted magnetic recording 审中-公开
    用于热辅助磁记录的隔热颗粒介质

    公开(公告)号:US20050202287A1

    公开(公告)日:2005-09-15

    申请号:US10797204

    申请日:2004-03-10

    IPC分类号: B05D5/12 G11B5/72

    CPC分类号: G11B5/7325 G11B5/65 G11B5/851

    摘要: A method of fabricating a magnetic storage medium comprises: forming an underlayer on a heat sink layer; co-sputtering a magnetic material and a thermally insulating nonmagnetic material to form a recording layer on the underlayer, wherein the recording layer includes grains of the magnetic material in a matrix of the thermally insulating nonmagnetic material; and heating the recording layer to align an easy axis of magnetization of the magnetic material in a direction perpendicular to the underlayer. A magnetic storage medium fabricated using the method is also provided.

    摘要翻译: 制造磁性存储介质的方法包括:在散热层上形成底层; 共同溅射磁性材料和绝热非磁性材料,以在底层上形成记录层,其中记录层包括在绝热非磁性材料的基体中的磁性材料颗粒; 并且加热记录层以使磁性材料的易磁化轴在垂直于底层的方向上对准。 还提供了使用该方法制造的磁存储介质。

    Perpendicular magnetic recording media including a uniform exchange enhancement layer
    3.
    发明申请
    Perpendicular magnetic recording media including a uniform exchange enhancement layer 审中-公开
    垂直磁记录介质包括均匀交换增强层

    公开(公告)号:US20060269797A1

    公开(公告)日:2006-11-30

    申请号:US11138622

    申请日:2005-05-26

    IPC分类号: G11B5/65

    CPC分类号: G11B5/65 G11B5/72

    摘要: An apparatus comprises a substrate, a soft underlayer on the substrate, an interlayer on the soft underlayer, a magnetic layer on the interlayer, wherein the magnetic layer has a granular structure comprising magnetic grains separated by non-magnetic grain boundaries, and an exchange enhancement layer formed on the surface of the granular magnetic layer.

    摘要翻译: 一种装置,包括基板,基板上的软底层,软底层上的中间层,中间层上的磁性层,其中磁性层具有由非磁性晶界分离的磁性颗粒的颗粒结构和交换增强 层形成在粒状磁性层的表面上。

    Composite heat assisted magnetic recording media with temperature tuned intergranular exchange
    4.
    发明申请
    Composite heat assisted magnetic recording media with temperature tuned intergranular exchange 有权
    具有温度调节晶间交换的复合热辅助磁记录介质

    公开(公告)号:US20070172705A1

    公开(公告)日:2007-07-26

    申请号:US11336799

    申请日:2006-01-20

    IPC分类号: G11B5/66

    摘要: A thin film structure comprises a first layer including a first plurality of grains of magnetic material having a first intergranular exchange coupling, and a second layer positioned adjacent to the first layer and including a second plurality of grains of magnetic material having a second intergranular exchange coupling, wherein the second intergranular exchange coupling is larger than the first intergranular exchange coupling and wherein the Curie temperature of the first layer is greater than the Curie temperature of the second layer. A data storage system including the thin film structure is also provided.

    摘要翻译: 薄膜结构包括第一层,其包括具有第一晶间交换耦合的第一多个磁性材料颗粒和邻近第一层定位的第二层,并且包括具有第二晶间交换耦合的第二多个磁性材料颗粒 ,其中所述第二晶间交换耦合大于所述第一晶间交换耦合,并且其中所述第一层的居里温度大于所述第二层的居里温度。 还提供了包括薄膜结构的数据存储系统。

    Chemically ordered, cobalt-three platinum alloys for magnetic recording
    5.
    发明授权
    Chemically ordered, cobalt-three platinum alloys for magnetic recording 有权
    化学有序的钴三铂合金用于磁记录

    公开(公告)号:US07186471B2

    公开(公告)日:2007-03-06

    申请号:US10374641

    申请日:2003-02-26

    申请人: Bin Lu Dieter Weller

    发明人: Bin Lu Dieter Weller

    IPC分类号: G11B5/66 G11B5/70

    摘要: A magnetic recording layer having polycrystalline chemical ordered (COX)3Pt or (COX)3PtY alloys. The additive X comprises Sc, Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Hf, Ta, W, Re, Os, B, or C, or any combination thereof. The additive Y comprises B, MgO, Al2O3, SiO2, P, CaO, CoO, B2O3, ZnO, NbO, Mo2O3, Co2O3, C, Cr, P, TiO2, Cr2O3, MnO, ZrO2, or BaO. The ratio of (CoX) to Pt is 2.33 to 4.00, plus or minus 5%. The additive Y may range from approximately 0 to 20% of the entire composition. The magnetic layer may be a constituent layer in a hard disc drive magnetic recording medium.

    摘要翻译: 具有多晶化学有序(COX)3 Pt或(COX)3 Pt 3合金的磁记录层。 添加剂X包括Sc,Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Ge,Nb,Mo,Ru,Rh,Pd,Ag,Cd,In,Sn,Hf,Ta, Os,B或C,或其任何组合。 添加剂Y包括B,MgO,Al 2 O 3,SiO 2,P,CaO,CoO,B 2, 3 O 3,ZnO,NbO,Mo 2 O 3,CO 2,N 2 O 3, / SUB,C,Cr,P,TiO 2,Cr 2 O 3,MnO,ZrO 2, ,或BaO。 (CoX)与Pt的比例为2.33〜4.00,加或减5%。 添加剂Y可以在整个组合物的约0至20%的范围内。 磁性层可以是硬盘驱动器磁记录介质中的构成层。

    Thin film structure having a soft magnetic interlayer
    6.
    发明申请
    Thin film structure having a soft magnetic interlayer 审中-公开
    具有软磁性中间层的薄膜结构

    公开(公告)号:US20060291100A1

    公开(公告)日:2006-12-28

    申请号:US11159500

    申请日:2005-06-23

    IPC分类号: G11B5/127 G11B5/82

    CPC分类号: G11B5/667 G11B5/7379

    摘要: A thin film structure that includes a hard magnetic recording layer, a soft magnetic underlayer and an intermediate layer between the hard magnetic recording layer and the soft magnetic underlayer is disclosed. The intermediate layer comprises a soft magnetic interlayer, and a non-magnetic interlayer between the soft magnetic interlayer and the hard magnetic recording layer. The thin film structure can be a recording medium. The soft magnetic interlayer can be crystalline.

    摘要翻译: 公开了一种薄膜结构,其包括硬磁记录层,软磁性底层和硬磁记录层与软磁性底层之间的中间层。 中间层包括软磁中间层和软磁中间层和硬磁记录层之间的非磁性中间层。 薄膜结构可以是记录介质。 软磁中间层可以是结晶的。

    Tilted magnetic recording media
    7.
    发明授权
    Tilted magnetic recording media 有权
    倾斜磁记录介质

    公开(公告)号:US07468214B2

    公开(公告)日:2008-12-23

    申请号:US11175858

    申请日:2005-07-05

    申请人: Bin Lu Dieter Weller

    发明人: Bin Lu Dieter Weller

    IPC分类号: G11B5/64

    摘要: A tilted magnetic recording medium comprises a layer of magnetic material having a magnetic easy axis defined by tilted alignment of a particular crystalline phase of the magnetic material. A film of (101) and (011) textured L10 phase of a tetragonal crystalline magnetic material has crystalline c-axes oriented 45° to the medium surface normal. The L10 crystalline magnetic alloy comprises a first element selected from the group consisting of Co and Fe, and a second element selected from the group consisting of Pt and Pd. A seedlayer comprising a bcc or B2 crystal structure with a natural texture of (110) creates interfacial stress with the magnetic layer, giving rise to a pure (101) and (011) textured L10 crystalline film. A textured underlying surface facilitates preferential formation of the seedlayer and subsequent growth of the magnetic material to achieve tilted magnetic directions perpendicular to the recording tracks.

    摘要翻译: 倾斜磁记录介质包括具有通过磁性材料的特定结晶相的倾斜对准限定的易磁化轴的磁性材料层。 四方结晶磁性材料的(101)和(011)纹理L10相的膜具有与中等表面法线成45°的晶体c轴。 L10结晶磁性合金包括选自Co和Fe的第一元素和选自Pt和Pd的第二元素。 包含具有(110)自然纹理的bcc或B2晶体结构的种子层与磁性层产生界面应力,产生纯(101)和(011)织构的L10晶体膜。 纹理下面的表面有助于种子层的优先形成和随后的磁性材料的生长以实现垂直于记录轨道的倾斜磁方向。

    Tilted magnetic recording media
    8.
    发明申请
    Tilted magnetic recording media 有权
    倾斜磁记录介质

    公开(公告)号:US20070009766A1

    公开(公告)日:2007-01-11

    申请号:US11175858

    申请日:2005-07-05

    申请人: Bin Lu Dieter Weller

    发明人: Bin Lu Dieter Weller

    IPC分类号: G11B5/66

    摘要: A tilted magnetic recording medium comprises a layer of magnetic material having a magnetic easy axis defined by tilted alignment of a particular crystalline phase of the magnetic material. A film of (101) and (011) textured L10 phase of a tetragonal crystalline magnetic material has crystalline c-axes oriented 45° to the medium surface normal. The L10 crystalline magnetic alloy comprises a first element selected from the group consisting of Co and Fe, and a second element selected from the group consisting of Pt and Pd. A seedlayer comprising a bcc or B2 crystal structure with a natural texture of (110) creates interfacial stress with the magnetic layer, giving rise to a pure (101) and (011) textured L10 crystalline film. A textured underlying surface facilitates preferential formation of the seedlayer and subsequent growth of the magnetic material to achieve tilted magnetic directions perpendicular to the recording tracks.

    摘要翻译: 倾斜磁记录介质包括具有通过磁性材料的特定结晶相的倾斜对准限定的易磁化轴的磁性材料层。 四方结晶磁性材料的(101)和(011)纹理的L1 相的膜具有与中等表面法线成45°的晶体c轴。 L1 结晶磁性合金包括选自Co和Fe的第一元素和选自Pt和Pd的第二元素。 包含具有(110)的天然质地的bcc或B2晶体结构的种子层与磁性层产生界面应力,产生纯(101)和(011)织构的L1 结晶膜。 纹理下面的表面有助于种子层的优先形成和随后的磁性材料的生长以实现垂直于记录轨道的倾斜磁方向。

    Nano-Scaled Reactor for High Pressure and High Temperature Chemical Reactions and Chemical Ordering
    9.
    发明申请
    Nano-Scaled Reactor for High Pressure and High Temperature Chemical Reactions and Chemical Ordering 审中-公开
    用于高压和高温化学反应和化学排序的纳米级反应堆

    公开(公告)号:US20090197123A1

    公开(公告)日:2009-08-06

    申请号:US12342455

    申请日:2008-12-23

    CPC分类号: G11B5/855 G11B5/70615

    摘要: A storage device includes a storage medium, a controller and a read/write head. The storage medium includes a substrate with a plurality of nano-structures arranged in an ordered pattern on a surface of the substrate. The controller is coupled to the storage medium. The controller has a read structure that extends over the substrate and a positioner adapted to adjust a position of the read structure relative to the substrate. The read/write head is mounted on the read structure and positioned over the substrate during operation. The read/write head is adapted to read and to write information to and from the plurality of nano-structures.

    摘要翻译: 存储装置包括存储介质,控制器和读/写头。 存储介质包括在衬底的表面上以有序图案排列的多个纳米结构的衬底。 控制器耦合到存储介质。 控制器具有在基板上延伸的读取结构和适于调整读取结构相对于基板的位置的定位器。 读/写头安装在读结构上,并在操作期间定位在衬底上。 读/写头适于读取和向多个纳米结构写入信息。